EC103D275 Allicdata Electronics
Allicdata Part #:

EC103D275-ND

Manufacturer Part#:

EC103D275

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SCR SENS GATE 400V 0.8A TO-92
More Detail: SCR 400V 800mA Sensitive Gate Through Hole TO-92
DataSheet: EC103D275 datasheetEC103D275 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 800mA
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 110°C
SCR Type: Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm): 16A, 20A
Current - Off State (Max): 1µA
Current - Hold (Ih) (Max): 5mA
Series: --
Current - On State (It (AV)) (Max): 510mA
Voltage - On State (Vtm) (Max): 1.7V
Current - Gate Trigger (Igt) (Max): 50µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 400V
Part Status: Obsolete
Packaging: Bulk 
Description

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EC103D275 Application Field and Working PrincipleThyristors - SCRs are semiconductor devices that can be used to control power in a variety of applications. This article examines the application field and working principle of the model EC103D275.The EC103D275 is a three-phase indirectly driven thyristor. This type of thyristor is primarily used in applications such as low voltage rectifiers and three-phase frequency governors to provide temperature control and on-off input voltage control. This type of thyristor is most often used in applications where a high-voltage three-phase source is available, and it has the ability to switch current flows using a low-voltage control circuit.The EC103D275 has a number of features that make it an ideal choice for many types of applications. It has a high switching media isolation capacity of 200 mA, which helps to reduce the risk of electrical damage or shorting. It also has a relatively low switching voltage drop and low thermal resistance. In addition, the thyristor has a low gate trigger voltage, which allows it to be used in applications with a wide range of operating voltages.The working principle of the EC103D275 is based on two intentional junctions between layers of P-type and N-type semiconductor material, known as the thyristor channel. When the gate voltage is applied to the thyristor, it causes a change in the conductivity of the channel. This causes a current flow, allowing the thyristor to control voltage and current.The EC103D275 is a robust and reliable thyristor with a wide range of applications. It provides effective control of power and current in most industrial, electronic and communication devices. In addition, it offers an economical solution for energy conversion, with its low switching voltage drop and low thermal resistance.In conclusion, the EC103D275 thyristor is a reliable and efficient device for many types of applications. It is able to provide reliable control of voltage and current, while remaining relatively inexpensive and providing maximum protection against electrical damage. Thanks to its low thermal resistance and low gate trigger voltage, it can be used in a wide range of operating voltages.

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