EDZVFHT2R12B Discrete Semiconductor Products |
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Allicdata Part #: | EDZVFHT2R12BTR-ND |
Manufacturer Part#: |
EDZVFHT2R12B |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 12V 150MW EMD2 |
More Detail: | Zener Diode 12V 150mW ±2% Surface Mount EMD2 |
DataSheet: | EDZVFHT2R12B Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03251 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 150mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Description
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Introduction to EDZVFHT2R12B
EDZVFHT2R12B is a single Zener diode offered by Vishay Semiconductors, a manufacturer of a wide range of semiconductor products geared for various applications and industries. These diodes are developed for maximum performance and reliability, and they offer a reliable solution to many challenging applications.Application Field of EDZVFHT2R12B
The EDZVFHT2R12B is a low power diode suited for general-purpose and low-stress applications. It is mainly employed in voltage regulation, transient suppression, and polarity protection circuits. These applications are mainly in consumer electronics, industrial automation, automotive, and telecom equipment.Due to their low power output and general-purpose design, the EDZVFHT2R12B is suitable for low-noise applications such as voltage regulation, surge suppression, and for use in RF (Radio Frequency) circuits.Working Principle of EDZVFHT2R12B
The EDZVFHT2R12B is a Zener diode, a type of diode which exhibits a high reverse breakdown voltage, allowing the diode to conduct in reverse voltage. A Zener diode works on the principle of avalanche breakdown, wherein, when the reverse voltage exceeds a certain level, the electric field within the device is increased drastically, causing electrons to suffer "avalanche" multiplication, achieving a breakdown voltage in the process.When the reverse voltage reaches the breakdown voltage, the diode exhibits a sharp increase in current, along with a decrease in the reverse voltage. The reverse voltage continues to drop until it reaches a steady value known as the Zener voltage. This Zener voltage is the reverse breakdown voltage when the Zener diode is used for voltage regulation. To sum up, the working of the EDZVFHT2R12B diode can be explained in the following steps:1. At reverse bias currents, the applied voltage increases until it reaches the breakdown voltage.2. At this point, electrons undergo multiplication, creating an avalanche breakdown.3. The replaced voltage value of the diode is the Zener voltage, which is maintained even when the applied voltage exceeds the Zener voltage.4. The EDZVFHT2R12B operates as a current regulator by diverting the excess current away from the device by producing heat.Conclusion
The EDZVFHT2R12B is a single Zener diode developed by Vishay Semiconductors, mainly suited for general-purpose and low-stress voltage regulation applications. The device operates on an avalanche breakdown principle, whereby when the reverse voltage exceeds a specific point, current production increases drastically and the replaced voltage value is the Zener voltage, allowing the device to work as a voltage regulator.The specific data is subject to PDF, and the above content is for reference
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