EMA3T2R Allicdata Electronics
Allicdata Part #:

EMA3T2R-ND

Manufacturer Part#:

EMA3T2R

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.15W
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMA3T2R datasheetEMA3T2R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: EMT5
Description

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An EMA3T2R is a type of pre-biased arrays made up of a combination of digital multipolar transistors, similar to the traditional bipolar junction transistors (BJT). It is among one of the latest evolution of structures generated from the latest advancements in semiconductor technology.

The main purpose of an EMA3T2R is to provide an interface between systems, effectively combining digital logic and low-level building blocks for efficient data transmission.

An EMA3T2R consists of three separate elements that form an orbiting array. The first element is the transistors, which convert the control signals of the array into electrical signals that can be interpreted by other components in the system. This array of transistors is then divided into two logical domains, known as the input portion and the reference portion.

The second element is a pre-biased common-source input, which increases the efficiency of the operational voltage swings within the array. By adjusting the current between the two ends of the array, the pre-biased input is able to control the voltage on the entire array with a degree of precision.

The third element is a precision temperature control circuit, which is used to ensure the accuracy of the pre-bias voltage. This allows the pre-bias voltage to remain constant over a wide range of temperature changes, thus ensuring that the correct bias voltage is applied throughout the array.

The fourth element is the switching buck-boost controller, which is used to control the bias on the array transistors. This allows the control signals to be accurately applied across the transistors in order to accurately control the characteristics of the array.

The overall working principle of an EMA3T2R application field is predicated on the notion that the combination of transistors, pre-biased input, precision temperature control, and buck-boost switching offers an efficient and reliable solution for data transmission. The combination of these elements allows for a highly accurate and stable voltage swing within the array, which can be reliably and accurately interpreted by other components within the system.

The main applications of the EMA3T2R are primarily for communications and control applications, such as cell phone base stations, wireless local area networks (WLAN\'s), digital video broadcast (DVB), and digital subscriber line (DSL) systems. Additionally, it can also be used in medical applications, such as patient monitoring systems and imaging equipment, where precise voltage control and accuracy is key.

In conclusion, the EMA3T2R is a type of pre-biased array that is composed of three separate elements. This array provides a high degree of accuracy and voltage stability in order to ensure reliable and accurate data transmission between systems. It is primarily used in communications and control applications.

The specific data is subject to PDF, and the above content is for reference

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