Allicdata Part #: | EMF32T2R-ND |
Manufacturer Part#: |
EMF32T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS DUAL DTA143T/2SK2019 EMT6 |
More Detail: | Transistor General Purpose PNP Pre-Biased, N-Chann... |
DataSheet: | EMF32T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP Pre-Biased, N-Channel |
Applications: | General Purpose |
Voltage - Rated: | 50V PNP, 30V N Channel |
Current Rating: | 100mA PNP, 100mA N-Channel |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EMF32T2R is a type of transistor that is specially designed for a variety of applications. The key feature of this transistor is its ability to give robust, linear performance over a wide temperature range. This makes it particularly suitable for applications where temperature fluctuations must be minimized, such as mobile phones and power supplies. It has an operating temperature range from -55 degrees Celsius to + 110 degrees Celsius, making it suitable for even very hot environments. The excellent linearity of the EMF32T2R also makes it suitable for use as a linear amplifier.
The EMF32T2R consists of two transistors wired in series, which is referred to as a Darlington configuration. The main advantage of this type of configuration is that it has a much higher gain than a single transistor configuration. In addition, the series connection minimizes thermal runaway, which is a common problem with single transistor designs. The higher gain of the Darlington configuration also reduces the amount of heat generated by the transistors, making the EMF32T2R ideal for use in a variety of high-temperature applications.
The working principle of the EMF32T2R is based on the principle of transistor action. Transistors are semiconductor devices that rely on a very small flow of electrons from one side of the device to the other, to control the current. In the case of the EMF32T2R, the electrons are held back from flowing from the collector terminal to the base terminal, by the base-emitter voltage. This results in a very linear current gain. The exact levels of current gain are determined by the resistors in the circuit, but in most cases the gain is quite high.
The EMF32T2R is used in a variety of applications including power supplies, RF amplifiers, automotive systems, and instrumentation. It is also often used in portable electronics and military equipment, due to its robust temperature performance and linear gain. In power supplies the EMF32T2R is used to protect against voltage spikes, by limiting the amount of current that can be drawn by the load. In RF applications it can be used as an amplifier or attenuator, to reduce or increase the amount of signal that is transmitted. In automotive applications it is often used as an ignition driver, to activate spark plugs.
The EMF32T2R is an excellent choice for a variety of applications due to its excellent performance over a wide temperature range and its high linear gain. Its robust design makes it suitable for use in demanding conditions, and its linear performance can be extremely useful in controlling current flows. With its excellent temperature performance and its ability to provide a linear current gain, the EMF32T2R is an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...