EMX52T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMX52T2RTR-ND |
Manufacturer Part#: |
EMX52T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN 50V 0.1A EMT6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10... |
DataSheet: | EMX52T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 350MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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EMX52T2R is a two-channelled, two-stage, bi-polar transistor array with integrated power control. It is developed for high power applications such as audio amplifiers, inverters and other power applications. It is primarily used in radio and audio power amplifiers, inverters and other power applications. It provides high power output and low power dissipation resulting from its low voltage drop. It also provides high reliability with highly stable operation over a wide temperature range.
The EMX52T2R array includes two complementary transistors per bank (T1 and T2), two thin film JFET transistors (N1 and N2), and two complementary resistors (R1 and R2). It features integrated on/off power control, built-in thermal protection, high voltage ratings and low thermal resistance. It also has a low operating power-up time, operating at low frequency and low power level. The power on and off are controlled by separate on/off gate voltage configurations.
The EMX52T2R works in power with two-stage structure, including the sources and collectors of the transistors T1 and T2, and the emitters of the thin-film transistors N1 and N2. The input voltage is applied via the gates of the transistors T1 and T2, which then drive the sources of the thin-film transistors N1 and N2 to turn on the transistors T1 and T2. The output voltage is developed across the collector of the transistor T2, which controls the drive potential of the transistors T1 and T2. This drive potential controls the precise operation of the power circuit.
The internal power amplifier of the EMX52T2R is designed with a precision low-frequency feedback system and with a precise current-limiting device. The amplifier, which can be reliably powered with high voltages, is designed to limit current to avoid overstressing the power transistors. The internal filtering also ensures low noise levels and high frequencies up to 50MHz. The low-frequency feedback system also provides precise operation at low frequencies.
The EMX52T2R is designed to protect itself against hazardous situations with the help of its overvoltage and short-circuit protection. The integrated thermal protection system monitors the temperature of the transistors, providing a powerful thermal protection against short-term overloads and continuous operations at temperatures of up to 150°C. The thermal protection ensures safe operation even during extreme conditions.
In summary, the EMX52T2R is a two-stage, bi-polar transistor array with integrated power control, providing high power output, low power dissipation, high reliability and highly stable operation across a range of temperatures. With the integrated on/off power control, built-in thermal protection, high voltage ratings and low thermal resistance, the EMX52T2R is a great choice for high power applications such as audio amplifiers and other power applications.
The specific data is subject to PDF, and the above content is for reference
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