EMZ51T2R Allicdata Electronics

EMZ51T2R Discrete Semiconductor Products

Allicdata Part #:

EMZ51T2RTR-ND

Manufacturer Part#:

EMZ51T2R

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 20V 0.2A EMT6
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 20V 200mA ...
DataSheet: EMZ51T2R datasheetEMZ51T2R Datasheet/PDF
Quantity: 8000
8000 +: $ 0.04239
16000 +: $ 0.03768
24000 +: $ 0.03532
56000 +: $ 0.03140
Stock 8000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 400MHz, 350MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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EMZ51T2R Application Field and Working Principle

EMZ51T2R is a transistor array typically used in the field of bipolar transistors which is produced by multiple miniature transistors that are integrated onto a single chip. This component is typically referred to as a "multi-transistor array" because multiple transistors are integrated onto the chip and are used to create a single component. This component is also known as an "integrated transistor array" because it integrates its multiple transistors onto one chip.

The EMZ51T2R is capable of providing up to fifty-two transistors for use within an application. These transistors are arranged such that each transistor is capable of driving its own discrete portion of the application, thus allowing for more complex operations. For example, one transistor may be used to drive a motor while another may be used to control a light bulb or LED. This type of transistor array is useful because it allows for more efficient operations because the individual transistors are not connected in the same way that a larger, single transistor would be. This makes the array more efficient and less prone to failures.

The EMZ51T2R also has other features that make it ideal for use in a variety of applications. These features include low-cost manufacturing, low-power consumption, low noise generation, and fast response times. All of these features make the EMZ51T2R well suited for use in applications where speed and efficiency are paramount. Additionally, the EMZ51T2R is available in both single-ended and complementary configurations, making it suitable for use in both analogue and digital applications.

The EMZ51T2R works by using two types of transistors in its operation. The first type, called the P-channel transistor, is a relatively low voltage device that can be used to switch a signal on or off. The second type, called the N-channel transistor, is a high voltage device which is used to control higher voltage signals. In a typical application, the P-channel transistor is used to drive a low voltage signal while the N-channel transistor is used to drive a high voltage signal. When used in combination, the two transistors work together to complete an application. For example, an amplifier may use the P-channel transistor to drive the input signal while the N-channel transistor is used to drive the output signal.

The EMZ51T2R is a useful component for applications where efficiency and speed are paramount. Its low-cost manufacturing, low-power consumption, low noise generation, and fast response times make it ideal for a variety of applications. Additionally, its ability to be used in both analogue and digital applications makes it versatile for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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