Allicdata Part #: | EN2222A-ND |
Manufacturer Part#: |
EN2222A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANSISTOR NPN TO-106 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | EN2222A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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EN2222A application field and working principle
The EN2222A is a single-stage, general purpose NPN silicon transistor. It can be used in many different electronic applications due to its high voltage rating and low power dissipation. This type of transistor is commonly available in both SOT-23 package and TO-92 package, with the latter commonly used as a replacement for the 2N2222 transistor.
When it comes to application fields, the EN2222A is mainly used in amplification of signals; since it is a NPN transistor, it is often found in multivibrators, Schmitt triggers, and other similar circuit designs. It can also be used in timer circuits, relay drivers, and as a general switch in different circuits. In addition to its amplification properties, the EN2222A can also be used to reduce noise in sensitive analog circuits, as it has a low-noise distortion and exceptional linearity.
The EN2222A operates as a two-terminal current-controlled device. The collector is the current input, and the base is the voltage input. When the base is put under a certain voltage, the current is allowed to flow from the collector through the emitter and terminates at ground. Increasing the voltage at the base further increases the current, creating a linear relationship between voltage and current known as gain. The current gain of the EN2222A transistor can be calculated using the following equation: dc gain = Ic/Ib, where Ic is the collector current and Ib is the base current.
When it comes to working principle, the EN2222A operates on the concept of minority carrier injection. This means that when the base voltage is increased, the electrons needed to form the current flow between the collector and emitter are injected from the base. The current gain of the transistor, known as hFE, is a measure of how much the current is amplified with an increase in base voltage. It is typically stated as a ratio of collector current to base current, with typical values ranging from 90 to 450.
As mentioned previously, the EN2222A is a general-purpose NPN transistor, and it can be used in a wide range of electronic systems. Its high voltage rating and low power dissipation make it versatile, and its linear behavior makes it an ideal choice for signal amplification. With its excellent current gain and low-noise distortion, it is an excellent choice for any application requiring amplification or switching.
The specific data is subject to PDF, and the above content is for reference
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