| Allicdata Part #: | ES1CHE3/61T-ND |
| Manufacturer Part#: |
ES1CHE3/61T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 150V 1A DO214AC |
| More Detail: | Diode Standard 150V 1A Surface Mount DO-214AC (SMA... |
| DataSheet: | ES1CHE3/61T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 150V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 25ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 150V |
| Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | ES1C |
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ES1CHE3/61T application field and working principle
ES1CHE3/61T, belonging to the group of single rectifier diodes, is a vital part of modern electrical circuits and electronic applications. They are widely used for protecting electronic components from reverse voltage and providing proper current and voltage flow in the electronic appliances or equipment that require such regulation.
The construction of an ES1CHE3/61T diode involves two PN junctions and a metal case structure that protect the device from external influences. The anode side is formed from an N-type semiconductor and the cathode side is formed from a P-type semiconductor while the metal case provides better insulation against external elements. This construction ensures that the diode functions properly and maintains the necessary electrical protection and proper current flow.
The most common use of ES1CHE3/61T diodes is in the applications which require safeguarding against reverse voltage. In case of a reverse voltage, the diode blocks the flow of current and its components remain protected. Reverse voltage protection is an essential requirement for all kinds of circuits and these diodes are designed to provide that protection.
Apart from protection, ES1CHE3/61T diodes contribute to the energy saving of circuits by restricting the current flow and allowing only the required amount of current to flow through the circuit. This reduces the energy loss and makes the circuit cost-effective.
ES1CHE3/61T diodes have various working principles depending upon their applications. For example, when used for frequency modulation, the diodes act as a switch and convert a high frequency current into a lower frequency one, or vice versa. Similarly, when used for voltage modulation, the diode acts as a protective device, protecting the circuit components from damage.
In addition to protection and power saving, these diodes are also used in various other applications. For instance, they are used to regulate the current and voltage in LED displays and they are used in audio amplifiers to control the level of distortion. They are also used as motion starters and speed controllers in AC and DC motors.
ES1CHE3/61T diodes are available in various sizes and packaging to meet the needs of different applications. Small size diodes are used in low power applications and high power diodes for high current and voltage applications.
In conclusion, ES1CHE3/61T diodes are essential components of modern electronic circuits and applications. They help to protect the components from the dangerous effects of reverse voltage, help to save energy and regulate current and voltage. In addition, these diodes have various working principles depending upon the application and are widely used in various applications such as LED displays, audio amplifiers, motor starters and speed controllers.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| ES1CLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1C-13-F | Diodes Incor... | -- | 5000 | DIODE GEN PURP 150V 1A SM... |
| ES1CLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RVG | Taiwan Semic... | 0.06 $ | 6000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1C-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A SM... |
| ES1CHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1C | ON Semicondu... | -- | 7500 | DIODE GEN PURP 150V 1A SM... |
| ES1CHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SM... |
| ES1CL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C-E3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CL R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RFG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ES1CL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1C-A40 | Omron Automa... | 516.15 $ | 1000 | INFRARED SENSOR 0-400CSen... |
| ES1CLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
| ES1CLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A SU... |
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ES1CHE3/61T Datasheet/PDF