Allicdata Part #: | ES1DDITR-ND |
Manufacturer Part#: |
ES1D-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 1A SMA |
More Detail: | Diode Standard 200V 1A Surface Mount SMA |
DataSheet: | ES1D-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES1D |
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Diodes are two-terminal electronic components which allow the current to flow in one direction only. They are essential in electronics, as they are used to protect circuits from over-voltage or inhibit the flow of current in undesired directions. The single diode ES1D-13 is extremely popular in the engineering field, as it is compact and versatile. This article will explain the practical applications and working principles of the ES1D-13.
Applications
The most common use for the ES1D-13 is as a rectifier, which converts alternating current (AC) to direct current (DC). This simple device can also be used in devices such as oscillators, modulators and demodulators, which are very important in radio communication equipment. Other applications include digital logic gates, in-circuit protection devices and pulse-width modulators. The advantages of the ES1D-13, such as its low cost, small size and high efficiency, make it a popular choice for many applications.
Working Principle
The ES1D-13 works on the principle of forward biasing and reverse biasing of p-n junction. When the diode is forward biased (positive voltage applied to anode, negative voltage applied to cathode), the diode allows current to flow from anode to cathode (also known as forward conduction). On the other hand, when the diode is reverse biased (positive voltage applied to cathode, negative voltage applied to anode), the diode restricts the current flow from anode to cathode (also known as reverse bias conduction). When no voltage is applied, the diode has a very high resistance.
The physical structure of the ES1D-13 is a silicon chip which is doped with impurities, forming regions of the diode. The anode is the country where there is extra amount of electrons, while the cathode is the region where there is an extra amount of holes (lack of electrons). When voltage is applied in the forward bias direction and current flows, the impurities present in the diode get converted into ions, and then recombines to form an equitable amount of electrons and holes.
Forward Voltage Drop
When current flows through the diode, there is a voltage drop across it. This voltage drop is known as the forward voltage drop, and is usually in the range of 0.6 to 0.7V. This is known as the so called “Forward Voltage Drop” of the diode. This is an important parameter that needs to be taken into accounts when designing a circuit. If the forward voltage drop is too high, the voltage drop across the device is more than the power supply voltage, leading to insufficient current.
Reverse Voltage
The reverse voltage rating is an important parameter to consider when choosing a diode. The reverse voltage rating is the maximum voltage the diode can withstand when in the reverse direction. This voltage is usually in range from 30V to 100V. It is important to take into account such things when designing the circuit. If the diode is exposed to a voltage higher than the reverse voltage rating, it can get damaged permanently.
Conclusion
The ES1D-13 is a simple yet versatile device that can be used in various applications as a rectifier and switching device. It is small and low cost, which makes it an ideal choice for many applications. Its forward and reverse voltage drop values need to be taken into consideration when designing circuits. Taking these parameters into account can make sure the diode works as expected, and helps protect the circuitry from damage.
The specific data is subject to PDF, and the above content is for reference
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ES1D-13-F | Diodes Incor... | -- | 230000 | DIODE GEN PURP 200V 1A SM... |
ES1D M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DV M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DVHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DRX | Nexperia USA... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1DV R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DVHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
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