Allicdata Part #: | ES1D-M3/61TGITR-ND |
Manufacturer Part#: |
ES1D-M3/61T |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ES1D-M3/61T Datasheet/PDF |
Quantity: | 1000 |
1800 +: | $ 0.07501 |
3600 +: | $ 0.06876 |
5400 +: | $ 0.06459 |
12600 +: | $ 0.06043 |
45000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES1D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.Diodes - Rectifiers - Single are a type of power device used in various applications. The ES1D-M3/61T diode is a single asymmetrical silicon epitaxial diode designed for moderate power applications. It has a lightly doped n-type and heavily doped p-type silicon layers. This combination gives the diode excellent power dissipation. Typical use cases include power converters, line-commutated inverters, high-voltage switches, and converters.
Application Field
The ES1D-M3/61T diode is a versatile device offering a wide range of applications. It can be used as a power rectifier in a variety of DC-DC converters. These include step-up/step-down inductors, switching regulators, and battery chargers. It is also most suitable for use as a voltage clamp for high-frequency switching applications. Some common use cases include AC-DC and DC-DC converters, SMPS, and motor control systems.
The device is suitable for high power applications such as power converters, inverters and motor controllers. It is also ideal for use in power systems that require high efficiency due to its low on-state resistance and low forward drop voltage. Furthermore, the manufacturer provides a wide range of packages, making it easy to design the circuit to meet desired specifications.
Working Principle
The ES1D-M3/61T diode works according to the junction built by its two silicon layers. When the diode is operating in its forward current, electrons flow from the n-type to the p-type, which results in the release of energy. This energy is dissipated in the form of heat which is then released by the diode. This allows the device to function as an efficient rectifier.
In reverse current, however, the opposite process occurs. This is known as minority-carrier injection or reverse conduction. Here, electrons move from the p-type layer to the n-type layer, and the device is said to be in its reverse-biased state. This causes the diode to block current flow, which is the reason why it is often used in voltage clamp applications.
The ES1D-M3/61T diode also acts as a temperature regulator. It provides excellent thermal management by reducing the potential of thermal runaway. This is achieved through its efficient heat dissipation and its ability to regulate temperature through the junction. This makes the diode suitable for applications where a high level of temperature control is required.
Conclusion
The ES1D-M3/61T diode is a versatile power device that is suitable for a wide range of applications. It is an excellent choice for moderate power applications due to its low on-state resistance and low forward drop voltage. Furthermore, it provides excellent thermal management through its efficient heat dissipation capabilities and its ability to regulate temperature. This makes it ideal for use in high power applications such as power converters, inverters, and motor controllers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1D-M3/61T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 200V 1A SU... |
ES1DLW RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1D R3G | Taiwan Semic... | 0.06 $ | 7200 | DIODE GEN PURP 200V 1A DO... |
ES1DLWHRVG | Taiwan Semic... | 0.06 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
ES1DL RVG | Taiwan Semic... | -- | 3000 | DIODE GEN PURP 200V 1A SU... |
ES1D-LTP | Micro Commer... | -- | 15000 | DIODE GEN PURP 200V 1A DO... |
ES1DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DAF | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DTR | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
ES1DVRX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1DE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 200V 1A DO... |
ES1D | ON Semicondu... | -- | 6598 | DIODE GEN PURP 200V 1A SM... |
ES1D-13-F | Diodes Incor... | -- | 230000 | DIODE GEN PURP 200V 1A SM... |
ES1D M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DV M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DVHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DRX | Nexperia USA... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1DV R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DVHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...