
Allicdata Part #: | ES1LJHR3G-ND |
Manufacturer Part#: |
ES1LJHR3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
7200 +: | $ 0.04977 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ES1LJHR3G Application Field and Working Principle
ES1LJHR3G is a high voltage single phase reverse blocking thyristor, also referred to as a silicon controlled rectifier (SCR). It is usually used to control high power ac circuits where a small phase lag and low control power are required. It is widely used in UPS and motor control systems, communication systems, and power supply systems, as well as various types of transformers, regulators, and power inverters.
Features and Benefits of ES1LJHR3G
The ES1LJHR3G has several features and benefits that make it well suited for use in high power control applications. These include:
- A high voltage blocking voltage rating of 800 V.
- Low leakage current of 0.07 µA.
- Low thermal resistance of 48.8 K/W.
- A wide temperature operating range from -55 to 125°C.
- High reverse-blocking capability.
- Low on-state resistance.
- High slew rate.
- High dV/dt capability.
Working Principle of ES1LJHR3G
The ES1LJHR3G consists of four semiconductor layers, as shown in the diagram below. Two of the layers form an intrinsic gate junction, while the other two form a reverse-blocking junction. When a gate signal is applied to the gate junction, the leakage current increases, and the device turns on. The main current then flows through the device, and the charge is stored in the reverse-blocking junction. When the gate signal is removed, the current no longer flows, and the charge stored in the reverse-blocking junction is used to block any reverse current from flowing through the device.

The ES1LJHR3G also has several additional features important in controlling AC circuits, such as temperature compensation, noise suppression, and current limit protection. As a result, the device is able to provide stable and reliable control of AC circuits.
Conclusion
The ES1LJHR3G is a high voltage single phase reverse blocking thyristor that is well suited for controlling high power ac circuits. It has a high reverse-blocking capability and low on-state resistance, as well as several protection features to ensure stable and reliable operation. It is widely used in UPS and motor control systems, communication systems, and power supply systems, as well as various types of transformers, regulators, and power inverters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1LG R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
ES1LG M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
ES1LJHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1LDHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1LGHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
ES1LJ M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1LJHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1LD M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1LJ R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1LD R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1LGHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
ES1LDHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
