ES2FHE3_A/H Allicdata Electronics
Allicdata Part #:

ES2FHE3_A/H-ND

Manufacturer Part#:

ES2FHE3_A/H

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 2A DO214AA
More Detail: Diode Standard 300V 2A Surface Mount DO-214AA (SMB...
DataSheet: ES2FHE3_A/H datasheetES2FHE3_A/H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12099
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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ES2FHE3_A/H is a type of single rectifiers diode, used in many power conversion applications. It has a wide reverse voltage range and excellent temperature coefficient. The device has a maximum reverse voltage of 500V and a leakage current of (Typical/Max) 10uA/20uA at 25°C respectively.

The application fields of ES2FHE3_A/H mainly focuses on low voltage drop and high forwarding current rectifiers with low forward voltage in the range of 400V. It is suitable for switching power supplies and all types of AC to DC supply converters. The device can be widely used in a variety of high frequency and high temperature applications due to its high surge current capability, reverse recovery time and low capacitance.

The working principle of ES2FHE3_A/H is an asymmetric two-layer p-n junction diode based on a reverse recovery method. The diode itself is actually a semiconductor. It has negative p-type region and positive n-type region. When bias is applied to the p-n junction, electrons and holes will become excited and conduct current. Due to the asymmetry of the device, there is a larger area of n-type region than p-type region, resulting in lower forward voltage and higher forward current. When a reverse voltage is applied, the electrons and holes recombine, leading to a fast recovery time.

ES2FHE3_A/H is designed to be highly reliable and able to withstand harsh environmental conditions. It is compliant with RoHS and tested under many stringent electrical and environmental conditions. The device comes in a molded SMD package with a high temperature soldering process. It provides optimized thermal resistance which allows the diode to dissipate more heat, ensuring a safe operation. It is also rated for high surge operation and can operate in temperatures from -40°C to 125°C.

In conclusion, ES2FHE3_A/H is a single rectifiers diode offering excellent features for power conversion applications. Its reverse recovery time is fast and its internal design is highly reliable. The device comes in a robust package and is compliant with RoHS standards. It has a maximum reverse voltage of 500V and a typical/maximum leakage current of 10uA/20uA respectively. Thus, it is suitable for switching power supplies and all types of AC to DC supply converters.

The specific data is subject to PDF, and the above content is for reference

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