ES2G-E3/52T Allicdata Electronics
Allicdata Part #:

ES2G-E3/52TGITR-ND

Manufacturer Part#:

ES2G-E3/52T

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 2A DO214AA
More Detail: Diode Standard 400V 2A Surface Mount DO-214AA (SMB...
DataSheet: ES2G-E3/52T datasheetES2G-E3/52T Datasheet/PDF
Quantity: 141750
1 +: $ 0.15000
10 +: $ 0.14550
100 +: $ 0.14250
1000 +: $ 0.13950
10000 +: $ 0.13500
Stock 141750Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: ES2G
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ES2G-E3/52T is a single rectifier diode, commonly referred to as a "Schottky diode". Its application field is relatively broad, as it can be used in a wide variety of switching and rectifying circuits, such as in power battery use, DC/DC converters, signal detectors, and other low-voltage small current power electric switch applications. In addition, it can also be used in the circuits of photovoltaic applications, voltage regulation and detection, motor drive and storage and so on.

In terms of its structure, ES2G-E3/52T is a normal block diodes with a Schottky barrier structure. Its main components are its semiconductor material and its electrode. The junction layer of the device has a thin Schottky barrier, which has the effect of rapid switching, low power consumption and low forward voltage drop. It is designed to meet the requirements of fast response, high reliability, small size, and low power consumption.

The working principle of the ES2G-E3/52T device is based on its semiconductor material and its electrode. When an electrical current is applied to the diode, the depletion area is formed on the semiconductor material, and the charge carriers of this area are electrons and holes. The electrons are attracted by the positive voltage of the electrode and the holes are attracted by the negative voltage of the electrode. The layer of junction between the semiconductor material and the electrode will be expanded, and the current will be allowed to pass through the diode.

The major advantages of the ES2G-E3/52T diode compared to other rectifier diodes include its low power consumption, its small size, its fast switching time, and its low forward voltage drop. These features make it suitable for high-speed, high-precision applications in a wide range of systems. In addition, the device has a high level of reliability and its performance is highly stable over time.

In conclusion, the ES2G-E3/52T is a single rectifier diode offering a wide range of applications. It has several advantages over other diode types due to its low power consumption, small size, fast switching time, and low forward voltage drop. Its application field is relatively broad as it can be used in power battery use, DC/DC converters, signal detectors, photovoltaic applications, voltage regulation and detection, motor drive and storage and so on. Additionally, the device is highly reliable and its performance remains stable over time.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ES2G" Included word is 20
Part Number Manufacturer Price Quantity Description
ES2GA R3G Taiwan Semic... 0.07 $ 3600 DIODE GEN PURP 400V 2A DO...
ES2GHR5G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2G-M3/5BT Vishay Semic... 0.08 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2G-E3/5BT Vishay Semic... -- 1000 DIODE GEN PURP 400V 2A DO...
ES2GTR SMC Diode So... 0.06 $ 1000 DIODE GEN PURP 400V 2A SM...
ES2GHE3/5BT Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GHE3_A/H Vishay Semic... -- 2245 DIODE GEN PURP 300V 2A DO...
ES2G-13-F Diodes Incor... -- 60000 DIODE GEN PURP 400V 2A SM...
ES2G M4G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2G R5G Taiwan Semic... 0.1 $ 850 DIODE GEN PURP 400V 2A DO...
ES2GAHM2G Taiwan Semic... 0.07 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GAHR3G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GHE3_A/I Vishay Semic... 0.13 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2G-M3/52T Vishay Semic... 0.14 $ 8250 DIODE GEN PURP 400V 2A DO...
ES2G-E3/52T Vishay Semic... -- 141750 DIODE GEN PURP 400V 2A DO...
ES2G-LTP Micro Commer... 0.06 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2G/1 Vishay Semic... 0.13 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GHE3/52T Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GA M2G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 400V 2A DO...
ES2GHM4G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 400V 2A DO...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics