
Allicdata Part #: | ES2G-E3/52TGITR-ND |
Manufacturer Part#: |
ES2G-E3/52T |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 2A DO214AA |
More Detail: | Diode Standard 400V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 141750 |
1 +: | $ 0.15000 |
10 +: | $ 0.14550 |
100 +: | $ 0.14250 |
1000 +: | $ 0.13950 |
10000 +: | $ 0.13500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2G |
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ES2G-E3/52T is a single rectifier diode, commonly referred to as a "Schottky diode". Its application field is relatively broad, as it can be used in a wide variety of switching and rectifying circuits, such as in power battery use, DC/DC converters, signal detectors, and other low-voltage small current power electric switch applications. In addition, it can also be used in the circuits of photovoltaic applications, voltage regulation and detection, motor drive and storage and so on.
In terms of its structure, ES2G-E3/52T is a normal block diodes with a Schottky barrier structure. Its main components are its semiconductor material and its electrode. The junction layer of the device has a thin Schottky barrier, which has the effect of rapid switching, low power consumption and low forward voltage drop. It is designed to meet the requirements of fast response, high reliability, small size, and low power consumption.
The working principle of the ES2G-E3/52T device is based on its semiconductor material and its electrode. When an electrical current is applied to the diode, the depletion area is formed on the semiconductor material, and the charge carriers of this area are electrons and holes. The electrons are attracted by the positive voltage of the electrode and the holes are attracted by the negative voltage of the electrode. The layer of junction between the semiconductor material and the electrode will be expanded, and the current will be allowed to pass through the diode.
The major advantages of the ES2G-E3/52T diode compared to other rectifier diodes include its low power consumption, its small size, its fast switching time, and its low forward voltage drop. These features make it suitable for high-speed, high-precision applications in a wide range of systems. In addition, the device has a high level of reliability and its performance is highly stable over time.
In conclusion, the ES2G-E3/52T is a single rectifier diode offering a wide range of applications. It has several advantages over other diode types due to its low power consumption, small size, fast switching time, and low forward voltage drop. Its application field is relatively broad as it can be used in power battery use, DC/DC converters, signal detectors, photovoltaic applications, voltage regulation and detection, motor drive and storage and so on. Additionally, the device is highly reliable and its performance remains stable over time.
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