ESD3V3D9-TP Allicdata Electronics

ESD3V3D9-TP Circuit Protection

Allicdata Part #:

ESD3V3D9-TPMSTR-ND

Manufacturer Part#:

ESD3V3D9-TP

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Micro Commercial Co
Short Description: TVS DIODE 3.3V 8.8V SOD923
More Detail: N/A
DataSheet: ESD3V3D9-TP datasheetESD3V3D9-TP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Base Part Number: ESD
Supplier Device Package: SOD-923
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 35pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 100W
Series: --
Voltage - Clamping (Max) @ Ipp: 8.8V
Voltage - Breakdown (Min): 5V
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressors) are components that provide over-voltage protection to sensitive circuits and they are available in a variety of configurations and packages. ESD3V3D9-TP is a type of transient voltage suppressor diode that is designed to protect circuits and components from over-voltage transients. It is commonly used in automotive, mobile electronics, and industrial applications where the protection of sensitive electronic components is needed.

The ESD3V3D9-TP is a bidirectional TVS diode with an operating voltage range of 6-15V. It has a rated peak pulse power of 3.3kV with a peak pulse current of 120A. The part is constructed with two elements, a N-channel MOSFET and an integrated diode array. It features an extremely fast response time and low capacitance, making it suitable for high-speed data transmission applications. Its low reverse leakage current ensures optimal performance under harsh conditions.

The working principle of the ESD3V3D9-TP is quite simple and can be described by the following steps: when the circuit voltage exceeds the device’s breakdown voltage, the N-channel MOSFET conducts in reverse to create a negative charge on the gate. This charge causes the depletion region of the integrated diode array to become narrower, allowing more current to flow. This additional current then reduces the voltage to a safe level. When the voltage returns to its normal level, the diode array reverts back to its forward bias and the protection is restored.

The ESD3V3D9-TP can be used in a variety of applications where over-voltage protection is required. These include automotive electronics such as airbags, seatbelts and power steering, as well as mobile electronics such as laptop computers and tablets. The device is also used in industrial applications where over-voltage protection of sensitive electronic components is necessary. It is designed to be used across multiple industries, making it a versatile option for a variety of applications.

The ESD3V3D9-TP TVS diode is a reliable and cost-effective solution for over-voltage protection. With its fast response time and low capacitance, it is well-suited for high-speed data transmission applications, making it a great choice for a variety of applications. Its low reverse leakage current ensures optimal performance even in harsh conditions, making it an ideal choice for automotive, mobile and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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