ESD5382MUT5G Circuit Protection |
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Allicdata Part #: | ESD5382MUT5G-ND |
Manufacturer Part#: |
ESD5382MUT5G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 3V 26V 2X3DFN |
More Detail: | N/A |
DataSheet: | ESD5382MUT5G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Voltage - Clamping (Max) @ Ipp: | 26V |
Supplier Device Package: | 2-X3DFN (0.62x0.32) |
Package / Case: | 0201 (0603 Metric) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | 1A (8/20µs) |
Series: | -- |
Voltage - Breakdown (Min): | 14.2V |
Voltage - Reverse Standoff (Typ): | 3V (Max) |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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ESD5382MUT5G is a type of transient voltage suppression (TVS) diode manufactured by ON Semiconductor. It is a unidirectional device that suppresses both electrostatic discharge (ESD) and electrical fast transients (EFT) caused by high-energy transients which can cause a device to malfunction or become damaged when a potential difference of high voltage is introduced. The ESD5382MUT5G has a surge peak power rating of 5.8kW and a breakdown voltage of 8.2V. It is offered in two packages: a SOD-323 package for surface mount and an SMA package for through-hole mount.
The ESD5382MUT5G is designed to protect portable electronic devices such as smartphones, laptops, and tablets from damage due to the sudden introduction of high peak power transients. This diode is designed to protect against transient voltage spikes up to 8.2V, which is much higher than the ESD threshold usually experienced in these types of applications. The ESD5382MUT5G also has a low capacitance of 0.27pF, which helps to protect the sensitive electronics inside the device from transient noises.
The working principle of the ESD5382MUT5G is to shunt transient current away from the sensitive electronics of the device. The diode is connected in series with the device and acts as a bridge between two voltage sources: one which is the power source the device is connected to, and the other which is the transient voltage spike. When the diode is exposed to a surge in voltage the current is diverted away from the device and dissipated through the diode. This prevents the electronics of the device from being damaged or over-heated.
The ESD5382MUT5G also offers high clamping and low leakage current for improved robustness and longer product life in applications such as consumer telecommunication systems, wireless handsets, and mobile devices. It can also be used in applications such as automotive and industrial electronics, military systems, and medical electronics. The diode also meets or exceeds the IEC 61000-4-2 ESD level 4 standard for immunity to 8kV contact discharge.
In summary, the ESD5382MUT5G is a type of transient voltage suppression (TVS) diode manufactured by ON Semiconductor. It is designed to protect portable electronic devices from damage due to the sudden introduction of high peak power transients. It also has a low capacitance of 0.27pF and a surge peak power rating of 5.8kW, making it useful for a variety of applications such as consumer telecommunication systems, wireless handsets, and mobile devices. The diode works by shunting transient current away from the device and dissipating it through the diode, thereby preventing the device from being damaged or over-heated.
The specific data is subject to PDF, and the above content is for reference
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