F0480NBGI8 Allicdata Electronics

F0480NBGI8 RF/IF and RFID

Allicdata Part #:

800-2827-2-ND

Manufacturer Part#:

F0480NBGI8

Price: $ 4.15
Product Category:

RF/IF and RFID

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC DGTL RF DVGA 13DB 32TQFN
More Detail: RF Amplifier IC LTE, WiMax 400MHz ~ 2.7GHz 32-VFQF...
DataSheet: F0480NBGI8 datasheetF0480NBGI8 Datasheet/PDF
Quantity: 1000
2500 +: $ 3.77559
Stock 1000Can Ship Immediately
$ 4.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Frequency: 400MHz ~ 2.7GHz
P1dB: 22.2dBm
Gain: 23dB
Noise Figure: 4dB
RF Type: LTE, WiMax
Voltage - Supply: 4.75 V ~ 5.25 V
Current - Supply: 117mA
Test Frequency: 900MHz
Package / Case: 32-WFQFN Exposed Pad
Supplier Device Package: 32-VFQFPN (5x5)
Description

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RF Amplifiers

RF amplifiers are a type of electronic systems mainly used in radio technology. They are used to amplify or pass radio frequencies between two circuits. RF amplifiers are essential components for any transmission infrastructure or electronic communication system.The F0480NBGI8 is a high performance RF amplifier Module from F0480NBGI8 Technology Corporation. It is designed to provide a high power gain, low noise amplifier for a wide range of applications in radio, telecommunications, and other high-frequency applications. The F0480NBGI8 operates in the frequency range of 50 MHz to 4 GHz with an output power of 23 dBm.The F0480NBGI8 consists of two major components: an amplifier and the integrated circuit (IC). The amplifier is a Low Noise Amplifier (LNA) based on the GaAs HEMT technology. It provides an excellent gain, low noise figure, and wide dynamic range for amplifier performance. The amplifier provides a gain of 26 dB while the noise figure is 2.5 dB. The IC chip integrates the output matching and control circuits. It provides necessary control logic for setting the gain or attenuation of the amplifier and the power supply voltage and ground for the amplifier and the IC.The working principle of the F0480NBGI8 amplifier module is based on the LNA technology. The amplifier uses a HEMT technology which is a type of semiconductor technology. The HEMT is a metal–insulator–semiconductor FET (MISFET) which has higher transconductance than other types of FETs. This technology is advantageous for low noise gain and high power applications as it offers a better signal-to-noisel (SNR) ratio and linearity.The F0480NBGI8 amplifier module has a wide range of applications such as wireless communication, radio broadcasting, military communication, direction finding (DF), jamming, and satellite communications. It provides a low noise gain up to 26 dB and has a power output of 23 dBm. It is also suitable for receiver pre-amplification in satellite and terrestrial communication systems. Besides, it can be used in test and measurement equipment, video receivers, and radar receivers.In summary, the F0480NBGI8 is a high performance RF amplifier module combining low noise amplifier and integrated circuit. This makes it an ideal choice for a wide range of applications in radio, telecommunication, and other high-frequency applications. It operates in the frequency range of 50 MHz to 4 GHz with an excellent gain, low noise figure and wide dynamic range for amplifier performance. This device is suitable for wireless communications, radio broadcasting, military communication, and other high-frequency applications.

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