Allicdata Part #: | F1857CCD1400-ND |
Manufacturer Part#: |
F1857CCD1400 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sensata-Crydom |
Short Description: | DIODE MODULE 1.4KV 55A |
More Detail: | Diode Array 1 Pair Common Cathode Standard 1400V 5... |
DataSheet: | F1857CCD1400 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1400V |
Current - Average Rectified (Io) (per Diode): | 55A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 165A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Operating Temperature - Junction: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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The F1857CCD1400 is a commercial-grade diode array specifically designed for power metal-oxide-semiconductor field-effect transistors (MOSFETs). As part of the family of standard rectifiers, it is a three-terminal silicon device used to protect a MOSFET from voltage spikes or sudden current surges due to a faulty load.The F1857CCD1400 is an avalanche-mode diode array, meaning it utilizes a reverse breakdown voltage lower than the peak reverse voltage of the device, so it can clamp signals at an optimum level. It also features a low capacitance and fast response time, making it ideal for applications in power MOSFETs. The F1857CCD1400 also has a high frequency operation up to 3 MHz, which makes it suitable for applications in automobiles, telecommunications, and more.The F1857CCD1400 is designed to protect MOSFETs against over-voltage and over-current scenarios, such as load shorts, motor transients, switching spikes, and transients. As a three-terminal device, it functions as a shunt or an open-junction to prevent over-voltage or over-current conditions. The F1857CCD1400 is also capable of providing a thermal shutdown protection in a low-power circuit.To properly use the F1857CCD1400, the anode and cathode must be connected to the power-ground and load-source nodes, respectively. The anode and cathode should be connected in a manner that keeps the reverse voltage across the diode below the specified maximum. The device should also be connected to a low-impedance return path to provide adequate thermal dissipation, and to prevent power-ground alienation and EMI noise injection.The F1857CCD1400’s working principle includes the breaking down of the junction between the anode and cathode—known as the reverse breakdown voltage—when the voltage across the diode exceeds the specified maximum. The diode then conducts in the reverse direction, allowing a current surge to flow until the forward voltage across the device reaches the rated peak current. When the diode reaches its breakdown voltage, it automatically turns off, and the reverse voltage across it returns to its off-state.Overall, the F1857CCD1400 is one of the most reliable and effective protection devices for power MOSFETs. With its fast response time, low capacitance, and high frequency operation, the F1857CCD1400 is a perfect choice for any application that needs reliable, efficient protection for power MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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