F1T1GHA0G Allicdata Electronics
Allicdata Part #:

F1T1GHA0G-ND

Manufacturer Part#:

F1T1GHA0G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 50V 1A TS-1
More Detail: Diode Standard 50V 1A Through Hole TS-1
DataSheet: F1T1GHA0G datasheetF1T1GHA0G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03308
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are a type of electronic component used to regulate and redirect electric currents. A single diode is a device that produces an electrical signal in response to an external electrical stimulus, while a rectifier is a device that converts alternating current (AC) into direct current (DC). Field effect transistors (FETs) are transistors that are designed to operate in a similar manner to field-effect diodes, and they are used in many high-end electronics devices. The combination of these three components is known as an F1T1GHA0G.

Field effect transistors are usually employed in high-power RF and microwave devices, as they can provide a much higher voltage gain, high impedance and improved linearity than traditional bipolar transistors. FETs are also used in microwave integrated circuits because of their low power consumption, small footprint and low noise. Additionally, FETs can be used to make switches and amplifiers, which is why they are found in many modern electronic systems.

The F1T1GHA0G is composed of a single diode, a single rectifier and a single field effect transistor. The diode is typically placed in series with the rectifier and the FET, and is used to control the flow of current. The diode allows current to flow in one direction, while preventing it from flowing in the opposite direction. The rectifier is then used to convert AC to DC, and the FET is used to amplify the signal. The combination of these three components is known as an F1T1GHA0G.

An F1T1GHA0G has a wide range of application fields. It can be used in power supplies, receivers, transmitters, switching devices, automotive electronics, digital signal processing, medical electronics, and many other applications. In particular, F1T1GHA0Gs are commonly used in power supplies for industrial, medical and military applications, as they are very efficient and durable. Furthermore, they can also be used in RF and microwave circuits, as they provide very good linearity.

The basic working principle of an F1T1GHA0G is very simple. The diode is used to control the direction of the current, and the rectifier converts the AC signal to DC. The FET then amplifies the signal, and the resulting output signal is then passed through a filter or processed by other electronic components.

In conclusion, field effect transistors, in conjunction with a single diode and a single rectifier, form a complete F1T1GHA0G. This component can be used in many different applications, as they are efficient and durable. Furthermore, they also provide excellent linearity, making them suitable for RF and microwave systems. The F1T1GHA0G is an essential component in many electronic systems, and its utility value should not be underestimated.

The specific data is subject to PDF, and the above content is for reference

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