F1T2GHA0G Allicdata Electronics
Allicdata Part #:

F1T2GHA0G-ND

Manufacturer Part#:

F1T2GHA0G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A TS-1
More Detail: Diode Standard 100V 1A Through Hole TS-1
DataSheet: F1T2GHA0G datasheetF1T2GHA0G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03440
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

F1T2GHA0G Application Field and Working Principle

The F1T2GHA0G is a fast-acting surface-mount glass-passivated single-phase rectifier diode. It is designed for use in high-frequency inverted-polarity converters, such as Power Factor Correction (PFC) circuits, Buck, boost and Cuk converters. The F1T2GHA0G can also be used to rectify high-frequency current in general power supplies, automotive and telecommunication applications, and solar converters.

This diode is made using proprietary high-temperature surface-mount technology. It is constructed with a glass passivation layer for high reliability and extended eco-life. This device features a maximum repetitive reverse voltage of 100V and a forward surge current of 8A. It is designed to be used in circuits operating at frequencies up to 100kHz, with an average forward current of 0.5A.

Working Principle of the F1T2GHA0G

The working of the F1T2GHA0G is based on the p-n junction diode. It is a semiconductor device that consists of a p-type semiconductor and an n-type semiconductor joined together. When a forward voltage is applied to the diode, current will flow in the forward direction because the p-type has a lower resistance than the n-type. This is known as the forward-bias region.

When a reverse voltage is applied to the diode, current does not flow because the p-node has a higher resistance than the n-type. This is known as the reverse-bias region. The F1T2GHA0G is designed to conduct current in the forward direction and block current in the reverse direction. This is what makes it a rectifier diode.

Applications of the F1T2GHA0G

The F1T2GHA0G is widely used as a rectifier diode in a variety of applications, such as power factor correction, buck, boost and Cuk converters, and solar converters. It can also be used to rectify high-frequency current in general power supplies, automotive and telecommunication applications.

The F1T2GHA0G is an ideal choice for high-frequency inverter power supplies, as it has a high frequency (up to 100kHz) and a peak surge current of 8A. It provides a good solution for replacing through-hole technology in a wide range of surface mount applications requiring high reliability and long life. The F1T2GHA0G also has a low forward voltage drop and a high current-carrying capacity.

In summary, the F1T2GHA0G is a fast-acting surface-mount glass-passivated single-phase rectifier diode. It is designed to rectify high-frequency current in general power supplies, automotive and telecommunication applications, and solar converters. The device features a maximum repetitive reverse voltage of 100V and a forward surge current of 8A and is most suitable for use in high-frequency inverter power supplies.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "F1T2" Included word is 6
Part Number Manufacturer Price Quantity Description
F1T2G R0G Taiwan Semic... 0.03 $ 1000 DIODE GEN PURP 100V 1A TS...
F1T2GHR0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
F1T2GHA1G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
F1T2GHA0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
F1T2G A1G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
F1T2G A0G Taiwan Semic... 0.04 $ 1000 DIODE GEN PURP 100V 1A TS...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics