Allicdata Part #: | F1T2GHA0G-ND |
Manufacturer Part#: |
F1T2GHA0G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A TS-1 |
More Detail: | Diode Standard 100V 1A Through Hole TS-1 |
DataSheet: | F1T2GHA0G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03440 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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F1T2GHA0G Application Field and Working Principle
The F1T2GHA0G is a fast-acting surface-mount glass-passivated single-phase rectifier diode. It is designed for use in high-frequency inverted-polarity converters, such as Power Factor Correction (PFC) circuits, Buck, boost and Cuk converters. The F1T2GHA0G can also be used to rectify high-frequency current in general power supplies, automotive and telecommunication applications, and solar converters.
This diode is made using proprietary high-temperature surface-mount technology. It is constructed with a glass passivation layer for high reliability and extended eco-life. This device features a maximum repetitive reverse voltage of 100V and a forward surge current of 8A. It is designed to be used in circuits operating at frequencies up to 100kHz, with an average forward current of 0.5A.
Working Principle of the F1T2GHA0G
The working of the F1T2GHA0G is based on the p-n junction diode. It is a semiconductor device that consists of a p-type semiconductor and an n-type semiconductor joined together. When a forward voltage is applied to the diode, current will flow in the forward direction because the p-type has a lower resistance than the n-type. This is known as the forward-bias region.
When a reverse voltage is applied to the diode, current does not flow because the p-node has a higher resistance than the n-type. This is known as the reverse-bias region. The F1T2GHA0G is designed to conduct current in the forward direction and block current in the reverse direction. This is what makes it a rectifier diode.
Applications of the F1T2GHA0G
The F1T2GHA0G is widely used as a rectifier diode in a variety of applications, such as power factor correction, buck, boost and Cuk converters, and solar converters. It can also be used to rectify high-frequency current in general power supplies, automotive and telecommunication applications.
The F1T2GHA0G is an ideal choice for high-frequency inverter power supplies, as it has a high frequency (up to 100kHz) and a peak surge current of 8A. It provides a good solution for replacing through-hole technology in a wide range of surface mount applications requiring high reliability and long life. The F1T2GHA0G also has a low forward voltage drop and a high current-carrying capacity.
In summary, the F1T2GHA0G is a fast-acting surface-mount glass-passivated single-phase rectifier diode. It is designed to rectify high-frequency current in general power supplies, automotive and telecommunication applications, and solar converters. The device features a maximum repetitive reverse voltage of 100V and a forward surge current of 8A and is most suitable for use in high-frequency inverter power supplies.
The specific data is subject to PDF, and the above content is for reference
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