F1T3GHA1G Allicdata Electronics
Allicdata Part #:

F1T3GHA1G-ND

Manufacturer Part#:

F1T3GHA1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 200V 1A TS-1
More Detail: Diode Standard 200V 1A Through Hole TS-1
DataSheet: F1T3GHA1G datasheetF1T3GHA1G Datasheet/PDF
Quantity: 1000
12000 +: $ 0.03037
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Description

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F1T3GHA1G, also known as Schottky diode, is a type of diode that has a very fast switching speed and an extremely low forward voltage drop. It has become increasingly popular in the field of rectifiers and other applications because of its low cost, high efficiency and robustness. The main application of F1T3GHA1G diode is in the power supply industry, where it is used for rectification and switching. It is also widely used for voltage regulation, flyback protection and so on.
F1T3GHA1G has a relatively simple structure compared to normal PN-junction diodes, as shown in Figure 1. It consists of two parts: an ohmic contact and a Schottky barrier. The ohmic contact is a metal layer which is placed in contact with the semiconductor. The Schottky barrier is a thin metallic layer above the ohmic contact that maintains a very low resistance by virtue of the small contact capacitance between them. This small resistance allows current to flow in the reverse direction when the applied voltage is above the Schottky Barrier voltage, usually 0.4 - 0.6V.
F1T3GHA1G diodes have many advantages over PN-junction diodes, such as higher current densities, lower switching losses, low forward voltage drop, and much faster reverse recovery time. One of the most important advantages of F1T3GHA1G is its low forward voltage drop, which makes it an ideal choice for rectification. This is because it has little dissipation across it, making it more efficient, and thus able to convert more of the incoming power into useful energy.
In addition to rectification, F1T3GHA1G diodes can also be used for voltage regulation. When necessary, F1T3GHA1G can be used in series with another diode with a lower forward voltage drop, such as a PN-junction diode. This way, the F1T3GHA1G diode will protect the PN-junction diode from any voltage spikes that occur when the input voltage is too high. Furthermore, F1T3GHA1G can also be used as an overcurrent protection device, as it can help limit the current passing through a circuit, thus avoiding damage and increasing safety.
F1T3GHA1G diodes are also employed in flyback protection circuits, as a way to protect components from damage due to excessive voltage or current. As the name implies, a flyback protection circuit works by “flybacking” the excessive current or voltage to its source, thus protecting the components from any excessive levels of current or voltage. F1T3GHA1G is used in these circuits due to its fast switching speed and low forward voltage drop, as well as its robustness and reliability.
In conclusion, F1T3GHA1G diodes are a type of diode used extensively in a large variety of applications, such as rectification, voltage regulation, flyback protection, and so on. They have many advantages over conventional PN-junction diodes, such as a very low forward voltage drop, high current densities, fast switching speeds, and robustness. F1T3GHA1G is an essential component in any power supply system, as it can help protect components from damage due to overvoltage or overcurrent.

The specific data is subject to PDF, and the above content is for reference

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