Allicdata Part #: | F3L400R07ME4B22BOSA1-ND |
Manufacturer Part#: |
F3L400R07ME4B22BOSA1 |
Price: | $ 117.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 650V 4... |
DataSheet: | F3L400R07ME4B22BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 107.10600 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 1150W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 400A |
Input Capacitance (Cies) @ Vce: | 26nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The F3L400R07ME4B22BOSA1 IGBT module is a cutting-edge device that offers high speed switching operation. It combines a modern insulated gate bipolar transistor (IGBT) with a built-in fast recovery diode and a passive gate driver. It is suitable for various switching applications including motor drives, switching power supplies and solenoid / relay control.
Application Field
The F3L400R07ME4B22BOSA1 IGBT module offers superior performance in a variety of applications. It has an industry-leading junction breakdown voltage of 400V and a low saturation of 2.20 V at a current of 17A. This makes it ideal for high-current, high-speed switching applications where low losses and high speeds are required.
It is suitable for various switching operations such as AC motor drives, DC motor drives, switching power supplies, solenoid / relay control and power factor correction. Additionally, its low turn-on and turn-off switching losses make it suitable for a wide range of applications such as welding, induction heating and UPS systems.
Working Principle
The working principle of an IGBT module is based on the bipolar junction transistor (BJT). In a BJT, the two inputs are current and base (or control) voltage. The output of a BJT is dependent on the current and voltage applied to the BJT. However, the IGBT produces a higher output than the BJT due to its insulated gate terminal that is connected to the base terminal.
The voltage applied to the gate terminal of the IGBT allows the passage of current between the collector and emitter terminals. When the voltage applied to the gate terminal is increased, more current is allowed to pass through the IGBT. When the voltage applied to the gate terminal is decreased, less current is allowed to pass through the IGBT.
By varying the voltage applied to the insulated gate terminal, the current flowing through the transistor can be controlled. This principle is applied in the F3L400R07ME4B22BOSA1 IGBT module and enables quick and efficient switching operations.
Conclusion
The F3L400R07ME4B22BOSA1 IGBT module is a high-performance device that offers fast switching operations for a variety of applications. Its insulated gate terminal allows the passage of current to be controlled by varying the voltage applied to the gate terminal. This makes it suitable for applications such as motor drives, switching power supplies and solenoid / relay control. Furthermore, its low-saturation voltage and high current capabilities make it ideal for high-current applications.
The specific data is subject to PDF, and the above content is for reference
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