F3L400R07ME4B23BOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	450A
Power - Max:	1150W
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 400A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	26nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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<div><p><strong>F3L400R07ME4B23BOSA1</strong> is an insulated gate bipolar transistor (IGBT) module, offered by Infineon Technologies. </p><p> An IGBT is a type of power semiconductor device combining the fast switching of a MOSFET with the voltage-handling capabilities of a bipolar transistor. The term IGBT is shorted from Insulated Gate Bipolar Transistor. Unlike a BJT, the gate terminal of an IGBT is isolated from the other three. Thanks to this arrangement, the IGBT combines the advantages of the two types of transistors by providing higher current ratings with faster switching frequency and higher efficiency.</p><p> The F3L400R07ME4B23BOSA1 is a high power insulated gate bipolar transistor module with internal anti-parallel freewheeling diode. It has NPT technology and offers a rated current of 400A and an avalanche energy of 40mJ. Its collector-emitter voltage is rated at 700V while its switching frequency is up to 10kHz and its di/dt alternative limit is 500 A/µs.</p><p> This IGBT module is specifically designed for motor drive applications and photovoltaic inverters. The integrated freewheeling diode connected in anti-parallel to the IGBT can reduce the shoot-through current and the electromagnetic interference while providing lower losses. The module is composed of 3 chips connected in parallel through a common direct bond copper (DBC) substrate, allowing a high thermal conductivity.</p><p> The module can handle switching frequencies up to 10 kHz, and due to its NPT technology it offers one of the lowest switching and conduction losses in the market, contributing to a high efficiency of the system. Compared to traditional IGBTs, it also offers better shot-through current immunity and a reduced reverse recovery time.</p><p> In conclusion, the F3L400R07ME4B23BOSA1 is a modern IGBT module specifically designed for motor drive applications and photovoltaic inverters, which offers a fast switching frequency, a high current rating, a high thermal conductivity, low switching and conduction losses, and better shot-through current immunity.</p></div>

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