Allicdata Part #: | F475R06W1E3BOMA1-ND |
Manufacturer Part#: |
F475R06W1E3BOMA1 |
Price: | $ 24.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | F475R06W1E3BOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 22.44190 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 275W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
F475R06W1E3BOMA1 is a part of the series of IGBT modules manufactured by Infineon technologies. The IGBT is a type of transistor (Insulated Gate Bipolar Transistor) which combines the features of both an insulated-gate field-effect transistor (IGFET) and a bipolar transistor. It is specifically designed to provide a higher current density together with superior switching performance. The F475R06W1E3BOMA1 IGBT module is a 600V 68A module. It is widely used in various industrial and commercial applications, including motor drives, welding systems, power tools, and other motor-control applications.
The working principle of the F475R06W1E3BOMA1 IGBT module is based on the capacitive principle. This means that when the gate voltage is switched, a capacitor between the gate and source terminals of the transistor is charged up. This charging of the capacitor results in a current flowing between the gate and the source of the transistor which in turn produces an electric field, thus turning it on. Conversely, when the gate voltage is switched off, the capacitor is discharged and the field is reduced, thereby turning the transistor off.
This module is based on a vertical structure which provides superior performance and superior thermal dissipation. Its reverse conduction capability ensures that the device is able to withstand back EMF and also short circuit conditions. It has a low on-state voltage drop which helps to keep the power consumption of the device low. In addition, it offers a wide turn-on/turn-off ratio which enables it to operate at higher frequencies. The device also has a built-in protection circuit which is designed to protect it from destruction in the event of an over-current or over-voltage.
The F475R06W1E3BOMA1 is widely used in various applications because it provides superior performance in terms of speed and current handling capability. It is used in motor drives and welding systems as it offers a fast switching speed which increases the efficiency of the system. It is also used in power tools due to its low on-state voltage drop, which helps to reduce power consumption. Additionally, its built-in protection circuit ensures that it can safely and reliably operate in the toughest conditions.
In conclusion, the F475R06W1E3BOMA1 IGBT module is a very popular component due to its superior performance, high current handling capability, fast switching speed, and low power consumption. It is widely used in various industrial and commercial applications, including motor drives, welding systems, power tools, and other motor-control applications. The working principle of the device is based on the capacitive principle and it is equipped with a built-in protection circuit. It is a very important component for reliably and safely operating system performance.
The specific data is subject to PDF, and the above content is for reference
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