Allicdata Part #: | F475R12KS4BOSA1-ND |
Manufacturer Part#: |
F475R12KS4BOSA1 |
Price: | $ 81.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 75A |
More Detail: | IGBT Module Three Phase Inverter 1200V 100A 500W ... |
DataSheet: | F475R12KS4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 73.73870 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 500W |
Vce(on) (Max) @ Vge, Ic: | 3.75V @ 15V, 75A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 5.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The F475R12KS4BOSA1 is a insulated-gate bipolar transistor (IGBT) module that is ergonomically designed for reliable performance in complex applications. It is an integrated module with a number of features that allow it to effectively perform in aggressive environments. This module has been designed to provide excellent power efficiency, sinusoidal switching, and minimized EMI. It has the capability of controlling high voltage applications up to 5kV. The F475R12KS4BOSA1 is suitable for use in a range of industrial applications such as motor control, variable frequency drives, and traction equipment.
The F475R12KS4BOSA1 is made up of three major components - a base plate, an upper plate, and an IGBT module. The base plate is fabricated from aluminum with an anodized finish to provide a durable and reliable surface for mounting. It\'s designed with three guide-slots for firm mounting and positioning. The upper plate is made from ceramic with a metalized long-edge for electrical insulation. It includes two metalized long-edges - one for electrical insulation and the other for connecting the electronic components. Finally, the IGBT module is made from a combination of silicon and metal to provide a durable, stable and low-cost solution for controlling high voltage applications.
The F475R12KS4BOSA1 works using the voltage ratings of a circuit. When the voltage rating is exceeded, the IGBT module is opened to allow the current to flow into the module and out of the device. This process is called switching and is controlled by the transistor\'s gate voltage. The gate voltage is increased or decreased by the gate driver, allowing the IGBT module to properly switch. This process occurs rapidly, allowing the IGBT module to quickly control the current.
The F475R12KS4BOSA1 is designed to handle current up to 5kV. It provides a more efficient and cost effective alternative to SCRs and other switching devices. The module is capable of switching very rapidly, allowing the electronic components to be switched on and off quickly. Additionally, the high voltage capacity of the F475R12KS4BOSA1 makes it ideal for controlling high voltage applications.
The F475R12KS4BOSA1 is suitable for a variety of applications such as motor control, variable frequency drives, and traction equipment. It offers a high level of control, efficiency and reliability. Additionally, its high voltage capacity makes it an ideal choice for applications in high-power environments. The module is easy to install and can be used in a wide range of industrial settings.
The specific data is subject to PDF, and the above content is for reference
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