Allicdata Part #: | F9UYPF5F5AAF072-ND |
Manufacturer Part#: |
F9UYPF5F5AAF072 |
Price: | $ 0.69 |
Product Category: | Uncategorized |
Manufacturer: | Panduit Corp |
Short Description: | 24-FIBER OS2 HD FLEX INDOOR SMAL |
More Detail: | N/A |
DataSheet: | F9UYPF5F5AAF072 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | * |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The F9UYPF5F5AAF072 could be more accurately referred to as a UHV-SEM system; it is a type of scanning electron microscope (SEM). The SEM is operated in ultra-high vacuum (UHV) conditions, allowing samples to be imaged without undergoing further preparation. In this matter, it is used specifically for research into atomically-thin layers and utilized in parallel to other physical analytical techniques, such as transmission electron microscopy and atomic force microscopy.
Within the F9UYPF5F5AAF072 system lies the true technological marvel of the device; its innovative combination of an in-situ ultra-high vacuum chamber and a scanning electron microscope provides a powerful tool for the analysis of fragile materials. The system is capable of imaging and measuring samples at a nanometric resolution, achieving a level of detail that allows scientists to study ultra-thin layers and other delicate components with minimal disruption.
The working principle which drives the F9UYPF5F5AAF072 is complex; basically, it centers around two components. The first portion is the in- situ UHV chamber, which is composed of a negatively charged electron emission source and a positively charged grid, the enlarged components of which can be seen in Figure 1. The second component is the SEM, which operates in tandem with the UHV chamber, allowing to image the scanned area of the sample surface. The SEM and the UHV chamber work together to produce an image by utilizing the principles of electron optics, whereby the electron beam is directed towards the specimen. The reflected electron beam is then used to construct an image.
There are numerous applications for the F9UYPF5F5AAF072 system. In particular, the device has proved invaluable in scientific studies of nanostructures, thanks to its capability of collecting detailed images and measurements down to a few nanometers of accuracy. This helps scientists better understand the properties of nanostructures, such as their chemical composition, electrical conductivity, strength and elasticity.
The F9UYPF5F5AAF072 is also utilized in research into fiber-optic cables and thin-film coatings, materials that have a small tolerance for high temperatures. In this regard, the device is used to monitor sample samples and to make measurements without the worry of thermal damage to the sample. The F9UYPF5F5AAF072 can also be used to measure resistivity, capacitance and other variables in a practical setting.
Overall, the F9UYPF5F5AAF072 is a powerful tool for research into delicate materials with nanometric resolution. Its combination of an in-situ UHV chamber and a scanning electron microscope stands as a unique example of technology that allows researchers to accurately measure and image ultra-thin layers and other delicate components. The device has proven invaluable in understanding nanostructures, as well as studying fibres-optic cable and coatings for thin films.
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DIODE GENERAL PURPOSE TO220
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