FCSP140ETR Discrete Semiconductor Products |
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Allicdata Part #: | FCSP140ETR-ND |
Manufacturer Part#: |
FCSP140ETR |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 40V 1A FLIPKY |
More Detail: | Diode Schottky 40V 1A Surface Mount Flipky™ |
DataSheet: | FCSP140ETR Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.23197 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 480mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 80µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | Flipky™ |
Supplier Device Package: | Flipky™ |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | FCSP140 |
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FCSP140ETR
FCSP140ETR is a kind of high performance fast recovery single-phase ultra-fast diode, which belongs to the rectifier diodes category of diodes. It has a wide range of application fields, from 500 kHz to 1.8 MHz high frequency switch-mode, and various power supply applications, such as AC/DC, DC/DC, as well as uninterruptible power supply (UPS).
Features
- Low forward voltage drop
- High surge capability
- Low power losses
- Good thermal and electrical characteristics
- Wide operating temperature range
Applications
- Uninterruptible power supply (UPS)
- AC/DC and DC/DC converters
- High frequency switch-mode power supply (SMPS)
- Computer power
- Battery chargers
- Telecommunication system
Working principle
FCSP140ETR diode is designed with a low reverse leakage current and efficient dissipating capability. It is composed of a silicon material and two electrodes connected to anode and cathode. The silicon material has two layers of P-type semiconductor and N-type semiconductor deposited on a single crystal substrate. The junction between the N and P layers forms the diode junction.
In a forward bias state, the diode is able to let current pass through the N and P layers, thus allowing voltage to transmit from the anode to the cathode. The electrons from the N layer are able to flow freely through the P layer and proceed to the anode terminal. On the other hand, holes from the P layer are forced towards the cathode terminal. Within the junction, holes from the P layer and electrons from the N layer recombine and release energy until they can no longer recombine, resulting in voltage drop across the junction. In a reverse bias state, the diode does not allow current to pass through due to the structure of the diode junction.
Therefore, FCSP140ETR diodes will show low reverse current leakage even when in reverse bias state but prevent current to flow safely when the polarity is reversed. It is great for power applications due to its low forward voltage drop and high surge capability. Moreover, its low power losses and good thermal and electrical conductivity make it suitable for high frequency switch-mode and other SMPS applications. It also has a wide operating temperature range, making it suitable for numerous applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FCSP140ETR | Vishay Semic... | 0.26 $ | 1000 | DIODE SCHOTTKY 40V 1A FLI... |
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