FCX1051ATA Discrete Semiconductor Products

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FCX1051ATA is a high-performance NPN transistor with a silicon epitaxial planar structure made by Fairchild Semiconductor. It has 2 volts of base-stop voltage and 2 volts of collector reverse breakdown voltage and is ideal for telecommunications, radio transmitting power amplifiers and audio frequency amplifiers applications.

The collector-emitter breakdown voltage of this device is 3.2 volts and it includes integrated resistance between the base and collector terminals. The device further includes an integrated diode from the base to the collector, which protects the device against thermal runaway. The diode is triggered by the temperature and shuts off the collector current when the temperature exceeds a certain limit. The integrated resistance also serves to minimize the interconnections required between the active elements, thus preventing capacitive coupling problems that can arise when multiple active devices are connected together.

The working principle of the FCX1051ATA is based on the fact that the voltage drop across the base-emitter junction is proportional to the current flowing through the junction. When a voltage is applied to the base, the current flowing through the base-emitter junction will increase. This in turn, causes the voltage across the base-emitter junction to increase which causes the collector current to increase as well. As the current through the base-emitter junction increases, the collector current will also increase.

The main application field for the FCX1051ATA is power amplifiers, either in radio frequency, audio frequency or broadband communication applications. It is often used as a low-cost alternative to its more expensive brothers, such as the RF power amplifier that uses Silicon Germanium transistors. The device is also ideal for applications such as audio amplifiers, headphone amplifiers, DC-DC converters, RF power amplifiers, and high-power transmission lines.

In terms of performance, the FCX1051ATA offers good stability under extreme load conditions and can provide a maximum power dissipation of 800mW. It also exhibits a wide frequency range with a high cut-off frequency of up to 4GHz. Finally, the device features a high voltage gain of up to 87dB, which makes it suitable for applications in the audio and broadcast markets.

Overall, the FCX1051ATA is an excellent choice for applications requiring low power and low noise performance. It is a reliable, low cost, and highly efficient NPN transistor that is suitable for a variety of applications in the telecommunications, radio transmitting, and audio frequency amplifier markets. The device also features integrated resistance and a diode to protect against thermal runaway, as well as a wide frequency range and high voltage gain.

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