FCX2016TC Discrete Semiconductor Products |
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Allicdata Part #: | FCX2016TR-ND |
Manufacturer Part#: |
FCX2016TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 40V SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 40V Surface Mount ... |
DataSheet: | FCX2016TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | FCX2016 |
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Transistors are important components used in many electronic applications. The FCX2016TC is a type of Bipolar Junction Transistor (BJT) that is usually categorized as a single device. Its use can be found in many electronic configurations from amplifiers to oscillators. It is a versatile and reliable element that is used in a variety of applications.
The FCX2016TC is a NPN BJT with a VCE(SAT) of 5V. It has a maximum collector current of 1A and a maximum leakage current of 10uA. It has both an internal and an external collector-emitter saturation voltage of 2V and 6V respectively. The FCX2016TC is mainly used in applications where high-speed switching capabilities are not required, such as amplifiers and oscillators.
The working principle of the FCX2016TC is based on the behavior of electrons in a semiconductor material such as silicon. This behavior is explained by the concept of PN junctions, whereby current can flow in the forward direction but is blocked in the reverse direction. When a base current is applied to the BJT, charge carriers (electrons and holes) are injected into the base region. The base current causes the concentration of electrons to increase, causing the electric field of the junction to become saturated.
This causes the BJT to enter the active mode, where both electrons and holes are available for conduction. The electrons then flow from the emitter to the collector, and the current gain of the BJT can be calculated from the ratio of collector current to base current. This current gain is affected by the base-emitter voltage, which can be manipulated by adjusting the base voltage.
The FCX2016TC can be used in many common electronic configurations, such as amplifiers, oscillators, and switching circuits. The collector-base junction of the BJT is common for amplifiers because it is easily biased to operate in the active region. This allows the BJT to amplify small input signals into much larger output signals.
In oscillators, the collector-base junction of a BJT is used in an astable multivibrator configuration, which produces a continual pulse train that can be used as an oscillating signal. For switching applications, the base-emitter junction of a BJT can be driven by a digital signal, allowing it to operate as an electronic switch.
The FCX2016TC is a reliable and versatile component that is used in a variety of applications. Its working principle is based on the electrical behavior of electrons in a semiconductor material. It is mainly used for amplifiers, oscillators and switching applications, and is capable of producing large output signals from small input signals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FCX2016TC | Diodes Incor... | 0.0 $ | 1000 | TRANS PNP 40V SOT89Bipola... |
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