| Allicdata Part #: | FCX593TR-ND |
| Manufacturer Part#: |
FCX593TA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS PNP 100V 1A SOT-89 |
| More Detail: | Bipolar (BJT) Transistor PNP 100V 1A 50MHz 1W Surf... |
| DataSheet: | FCX593TA Datasheet/PDF |
| Quantity: | 4000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 25mA, 250mA |
| Current - Collector Cutoff (Max): | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | SOT-89-3 |
| Base Part Number: | FCX593 |
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FCX593TA is a transistor belonging to the family of bipolar junction transistors (BJTs). This type of transistor is composed of an NPN or PNP semiconductor material. Its design is such that it has an internal structure composed of three layers which allows current and voltage gain. Thus, the current gain of a BJT is known as hFE, while the voltage gain is called hFE. This type of transistor is the preferred device for amplifying signals, due to its wide range of applications.
FCX593TA is widely used in medium-power amplifier and oscillator circuits. It has been designed to meet the demands of medium power applications, with excellent performance in terms of frequency bandwidth and power dissipation. In medium-power amplifier and oscillator circuits, it is used in a wide variety of industrial, consumer, medical, and military applications. The pinout consists of three pins including the collector, base, and emitter designating the PNP or NPN configuration.
The working principle of the FCX593TA is based on the fact that current is able to flow through the device when a voltage is applied to the base. This voltage causes the transistor to become active and the collector receives a current through a process known as the junction potential. The collector current is then amplified and is able to flow from the collector to the emitter. The transistor is also capable of providing voltage and current gain.
To ensure excellent performance, the FCX593TA transistor has been designed with intricate construction. It employs a high breakdown voltage, low thermal resistance, and high switching speed. Furthermore, it features a maximum collector current of 30mA and a maximum power dissipation of around 350mW. The device has a maximum Gain Bandwidth Product of 6GHz.
When it comes to the application field of FCX593TA, it is often used in applications such as power amplifiers, linear amplifiers, radio receivers, mixers, digital stores, and many other applications. It is also used in digital processors, like microcontrollers and digital signal processors. Additionally, FCX593TA is often used in amplifiers for measuring and control equipment, audio and industrial systems, telecommunications, optical systems, and automotive audio.
In conclusion, the FCX593TA is a type of BJT transistor that is suitable for amplifying signals. Its three-pin NPN or PNP design makes it a preferred device for medium-power amplifier and oscillator applications. It is designed with high break-down voltage, low thermal resistance and high switching speed, making it ideal for a wide range of applications. Applications of FCX593TA include amplifiers, receivers, mixers, digital stores, and many others.
The specific data is subject to PDF, and the above content is for reference
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FCX593TA Datasheet/PDF