
FCX619TA Discrete Semiconductor Products |
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Allicdata Part #: | FCX619TR-ND |
Manufacturer Part#: |
FCX619TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 50V 3A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 165MHz 2W Surf... |
DataSheet: | ![]() |
Quantity: | 11000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 100mA, 2.75A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 2V |
Power - Max: | 2W |
Frequency - Transition: | 165MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | FCX619 |
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The FCX619TA is a rugged, long-life device and is a single bipolar junction transistor (BJT). It is usually used for general purpose low power applications. The robust construction makes it suitable for use in automotive and other mission critical environments. It is designed for operation in high ambient temperatures up to 175°C. The device is made from an industrial grade NPN silicon epitaxial planar transistor and is hermetically sealed using a low cost gull-wing leadframe.
The transistor is constructed using one NPN transistor in a lead frame package. The lead frame is made up of a base and two emitter leads. The emitter leads are bent over to form the collector, and the base lead forms the collector and the base lead. The device can be used with either the emitter or the collector as the driving point.
The collector-base junction is the main junction of the device, and it controls the current flow through the device. This junction is made of heavily doped silicon and has a high resistance. This junction has a built-in bias voltage, so no external bias voltage is required. The base-emitter junction is also heavily doped, but the resistance of this junction is much lower than that of the collector-base junction.
The device works on the principle of minority carrier injection. This type of device works by modifying the amount of current flowing through it by modulating the potential difference between its two ends. When the base-emitter junction is forward biased, electrons are injected from the emitter into the base region, where they create a thin layer of minority carriers at the surface of the base region. This thin layer of minority carriers reduces the resistance of the base region and increases the current flow. When the base-emitter junction is reverse biased, the reverse current reduces, thereby reducing the current flow through the device.
The device is commonly used in amplifiers, generators, converters, oscillators and switching applications. It can be used in amplifier circuits as a common emitter amplifier due to the high current gain, low noise operation and the ability to operate at high frequencies. The device can also be used in pulse-width modulation (PWM) circuits due to its fast switching capability. The device can also be used in generator circuits for timing and control applications. It can also be used in converter circuits for applications such as buck converters, boost converters and flyback converters.
The FCX619TA is a reliable bipolar junction transistor and a robust choice for challenging automotive and other mission-critical applications. It is designed for operation in high ambient temperatures up to 175°C, making it suitable for automotive and other high-temperature applications. With its low power dissipation, rugged construction and the ability to work at high frequencies, this device is an ideal choice for use in amplifier, generator, converter and switching applications.
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