FD150R12RT4HOSA1 Allicdata Electronics
Allicdata Part #:

FD150R12RT4HOSA1-ND

Manufacturer Part#:

FD150R12RT4HOSA1

Price: $ 39.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 1200V 150A
More Detail: IGBT Module Trench Field Stop Single Chopper 1200V...
DataSheet: FD150R12RT4HOSA1 datasheetFD150R12RT4HOSA1 Datasheet/PDF
Quantity: 6
1 +: $ 35.96670
10 +: $ 33.78630
Stock 6Can Ship Immediately
$ 39.56
Specifications
Series: C
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 790W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FD150R12RT4HOSA1 is a high-speed, high-voltage IGBT module that has applications in a wide range of industries, such as robotics and semiconductors. With its combination of fast switching speeds and high ratings, this module can be used to control high-power applications that require precision in control. This article will explain the application field and working principle of the FD150R12RT4HOSA1. 

The FD150R12RT4HOSA1 is ideal for applications involving high-voltage switching. It is rated for up to 1200V, making it an excellent choice for applications such as motor control and power regulation. The module can handle loads of up to 500A, making it suitable for high-power applications. Its fast switching speed allows it to be used in applications such as motor control where precision and accuracy are critical. The module also features short circuit protection and soft-switching, making it suitable for use in applications where power needs to be regulated on a continuous basis.

The FD150R12RT4HOSA1 is a high-voltage, high-speed IGBT module that uses an insulated-gate bipolar transistor (IGBT) to control the flow of electricity. The IGBT is a special type of transistor that consists of two terminals (the gate and the collector) and an insulated gate that controls the flow of electricity between the two terminals. The gate is controlled by an external voltage, and the collector is connected to the load. The switching action of the IGBT module is controlled by the application of a control signal, typically in the form of a voltage.

When the control voltage is applied to the gate of the IGBT module, it causes a change in the electrical characteristics of the module, allowing current to flow between the collector and the gate. When the control voltage is removed, the current stops flowing and the module returns to its insulation state. This process is known as “switching” and is used in many applications.

The FD150R12RT4HOSA1 features a high isolation voltage rating of 15kV, which makes it suitable for applications that require high levels of isolation. This module can also be used in applications that require a high endurance rating due to its high current handling capabilities. The module also features an integrated protection system which helps protect the module from short circuits and overcurrents.

The FD150R12RT4HOSA1 is an ideal module for applications where high-voltage switching is required. Its combination of high ratings and fast switching speeds make it suitable for a wide variety of applications. Its integrated protection system and robust construction make it suitable for applications where power needs to be regulated on a continuous basis. With its combination of features, the FD150R12RT4HOSA1 is an excellent choice for any application needing high-voltage switching.

The specific data is subject to PDF, and the above content is for reference

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