Allicdata Part #: | FD800R17KE3B2NOSA1-ND |
Manufacturer Part#: |
FD800R17KE3B2NOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 800A |
More Detail: | IGBT Module |
DataSheet: | FD800R17KE3B2NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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An FD800R17KE3B2NOSA1 is a module that utilizes Insulated Gate Bipolor Transistors, otherwise known as IGBTs. These modules are electrical components used extensively in modern electronic circuitry and can produce efficient, accurate, and reliable power control for many applications. This article will explore the application field and working principle of this type of module.
Application Field
The FD800R17KE3B2NOSA1 module is used in many different applications, including power electronics, electric power conversion, and motor control. It has a high working frequency, which makes it ideal for high-speed switching applications such as Variable Frequency Drives (VFDs), Uninterrupted Power Supply (UPS), and Electric Vehicle (EV). This module is also used in other industrial applications, such as voltage regulating, lighting, and telecom.
Working Principle
The FD800R17KE3B2NOSA1 module works by combining the properties of a MOSFET (Metal Oxide Semiconductor FieldEffect Transistor) and a BJT (Bipolar Junction Transistor). This combination of components allows for increased switching speed, higher voltage carrying capacity, and lower power losses. The IGBT is also capable of operating at high frequencies, allowing for efficient voltage regulation and accurate power control.
The basic operation of the IGBT is fairly straightforward. The IGBT operates by turning ON and OFF an N-channel MOSFET transistor in order to control the voltage and current flow. When the IGBT is turned ON, the positive gate voltage causes the MOSFET transistor to conduct, allowing current to flow from the collector to the emitter. Conversely, when the IGBT is turned OFF, the negative gate voltage causes the MOSFET transistor to become non-conductive, stopping the current from flowing from the collector to the emitter. In order to ensure accurate and reliable operation, it is important to provide the appropriate gate voltage.
Conclusion
The FD800R17KE3B2NOSA1 is a useful and reliable electrical component. It is used in many different applications, including power electronics, electric power conversion, and motor control. This type of module utilizes an IGBT to provide high switching speeds, high voltage carrying capacity, and low power losses. The IGBT is also capable of operating at high frequencies, allowing for efficient voltage regulation and accurate power control. Thus, the FD800R17KE3B2NOSA1 module is an invaluable tool for many different industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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