FDH333TR Allicdata Electronics

FDH333TR Discrete Semiconductor Products

Allicdata Part #:

FDH333TRTR-ND

Manufacturer Part#:

FDH333TR

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 125V 200MA DO35
More Detail: Diode Standard 125V 200mA Through Hole DO-35
DataSheet: FDH333TR datasheetFDH333TR Datasheet/PDF
Quantity: 1000
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 3nA @ 125V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: FDH333
Description

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FDH333TR Application Field and Working Principle

The FDH333TR is a single, extremely fast-recovery, high-voltage diode that is used in various applications, including voltage boost and transient voltage protection. This fast recovery diode can operate with both AC and DC, allowing it to be used in power converters and light dimming applications. The device is based on high breakdown voltage and fast recovery time, making it a suitable choice for applications where speedy recovery time is critical.

The FDH333TR can be used for voltage boost and voltage protection in various types of electronic applications. When used as a voltage booster, the FDH333TR provides an inexpensive and efficient way to step up the voltage. This type of diode is also suitable for transient voltage protection, ensuring that components are not damaged by excessive voltage. High voltage and high current handling capability makes this diode a suitable choice for a variety of applications.

The FDH333TR is based on a “pluse tratrap-doped p-n junction”, offering high performance for both forward and reverse current conditions. The device features a high-voltage breakdown of 300 volts, with a fast recovery time of only 10 nanoseconds. The device also features a low reverse current leakage of 50 nano amps, which ensures that no excess current is present during the reverse voltage condition. The FDH333TR also helps reduce power loss due to its low forward voltage drop of approximately 0.75 volts. This is essential for efficiency and power savings.

The FDH333TR is ideal for a wide range of applications, such as inverters, converters, lighting dimmers, and power supply systems. Its high-voltage breakdown, fast recovery time, and low forward voltage drop make it a suitable choice for these applications, while its reverse current leakage ensures that no excess current is present during the reverse voltage condition. This device is an ideal choice for power-saving applications, as it helps reduce power loss compared to other types of diodes.

To summarize, the FDH333TR is a single, extremely fast-recovery, high-voltage diode that can be used in applications such as voltage boost and transient voltage protection. It is based on a “pluse tratrap-doped p-n junction” and offers high performance for both forward and reverse current conditions. Its high-voltage breakdown, fast recovery time, and low forward voltage drop make it a suitable choice for a variety of applications. Its low reverse current leakage also helps ensure that components are not damaged by excessive voltage.

The specific data is subject to PDF, and the above content is for reference

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