FDSD036RJ Allicdata Electronics
Allicdata Part #:

BEL31611-ND

Manufacturer Part#:

FDSD036RJ

Price: $ 3.51
Product Category:

Uncategorized

Manufacturer: Belden Inc.
Short Description: FD DN_TB OS2 36F OFNR
More Detail: Fiber Optic Cable
DataSheet: FDSD036RJ datasheetFDSD036RJ Datasheet/PDF
Quantity: 1000
1 +: $ 3.19410
Stock 1000Can Ship Immediately
$ 3.51
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDSD036RJ is an advanced semiconductor device developed for a wide range of applications. It is a wide-band gap device featuring low on-state resistance and high current-handling capability. The device is widely used for switching and energy-saving in industrial, automotive, and home applications for electronic control circuits.

The FDSD036RJ is basically a power MOSFET that works on the principle of negative-resistance braking. It is designed to be used as part of an automated control system, where it is employed to turn electrical devices on and off. The device is characterized by a low on-state resistance and a high current-handling capability. This makes it suitable for use in applications requiring reliable power switching.

The FDSD036RJ has a number of highly efficient performance features such as fast switching speed, low stand-by power consumption, and low energy losses. The device can operate normally over a range of temperature and humidity and its rugged construction makes it suitable for operation in harsh environments. The device also features a fast recovery-time circuit that helps to reduce inductive kickback and minimize emitted electromagnetic disturbances.

The FDSD036RJ can be used in a multitude of applications, such as motor drive, lighting systems, switching power supplies, and telecommunications equipment. It can also be used in a variety of industrial, automotive, and home control systems for applications such as temperature control, light control, and audio control.

The FDSD036RJ utilizes a voltage-controlled negative-resistance braking mechanism in order to achieve its low on-state resistance and high current-handling capability. This mechanism is based on the principle that when a voltage that is higher than the given threshold voltage is applied to the gate of the device, electrons are drawn from the drain terminal to the gate and the gate voltage decreases. This causes the device to enter the cutoff region and reduce the flow of current from the source to the drain. The current flow is then effectively limited and the device operates in the saturation region.

The FDSD036RJ also features a fast recovery-time circuit, which helps to reduce the phenomenon of inductive kickback. This phenomenon occurs when the drain-to-source voltage increases suddenly, resulting in the immediate turning off of the device due to the high gate voltage. The fast recovery-time circuit helps to reduce the voltage spike caused by this phenomenon, thus reducing the risk of damage to connected devices.

In conclusion, the FDSD036RJ is an advanced semiconductor device capable of providing reliable power switching over a wide range of temperatures and humidities. The device is suitable for use in a variety of applications, such as motor drive, lighting systems, switching power supplies, telecommunications equipment, and home control systems. Its low on-state resistance and fast recovery-time circuit make it a cost-effective and reliable choice for applications where power switching is needed.

The specific data is subject to PDF, and the above content is for reference

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