FDZT40RB7.5 Allicdata Electronics

FDZT40RB7.5 Discrete Semiconductor Products

Allicdata Part #:

FDZT40RB7.5TR-ND

Manufacturer Part#:

FDZT40RB7.5

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 100MW 7.5V SMD0402
More Detail: Zener Diode 7.5V 100mW Surface Mount SMD0402
DataSheet: FDZT40RB7.5 datasheetFDZT40RB7.5 Datasheet/PDF
Quantity: 40000
40000 +: $ 0.03243
80000 +: $ 0.02876
Stock 40000Can Ship Immediately
$ 0.04
Specifications
Series: RASMID
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: --
Power - Max: 100mW
Current - Reverse Leakage @ Vr: 500nA @ 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Supplier Device Package: SMD0402
Description

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Diodes – Zener – Single refers to a type of single electronic device, specifically a diode, that is used to limit and regulate voltage in an electrical circuit. The FDZT40RB7.5 is a single Zener diode, whose application field and working principle will be discussed in this article.

The FDZT40RB7.5 is typically used as a voltage stabilizer in an electrical circuit, or as a protective device against sudden surges or “spikes” in an electrical system. Typical applications include radio receiver applications, overvoltage protection, or automated circuit protection. The FDZT40RB7.5 can be placed in series with the power source and when the voltage is exceeded to a set limit, the diode will break down and serve as a voltage limiter, reducing the voltage in the downstream components.

The FDZT40RB7.5 is designed for use in circuit supply lines with a maximum power rating of 4 kW. It has a breakdown voltage of 7.5V, a maximum reverse leakage current of 1mA, a maximum forward voltage drop of 0.3V, and a reverse voltage (breakdown voltage) of 10V. It also has a peak-to-peak ripple noise rating of 15mV, making it suitable for power line filtration applications. The chip’s maximum power dissipation rate is 1W.

The FDZT40RB7.5 is constructed using a single N-type semiconductor layer. The device is designed to have several possible breakdown voltages, from 7.5V up to 15V, allowing it to be used in a variety of applications. The chip also works with a wide range of power levels from low to high. It has a maximum forward current of 4A, a maximum reverse current of 20uA and an operating temperature range of -40°C to +70°C.

The working principle of the FDZT40RB7.5 is based on the simple behavior of diodes. With the same amount of voltage applied, the diode will produce different results depending on which direction the current is directed. If the current is directed toward the anode, the voltage will be reduced, providing a voltage stabilizing effect. This is known as a Zener breakdown phenomenon. If however, the current is directed away from the anode, the current will be limited to the diode’s max current rating. This prevents the circuit from obtaining too much power in the case of a sudden surge due to a spike in the circuit.

The FDZT40RB7.5 is a single Zener diode that can be used in a variety of applications for limiting and regulating voltages in electrical circuits. It has a power rating of 4kW and many other beneficial properties, such as its wide range of possible breakdown voltages, a low power dissipation rate, a low peak-to-peak ripple noise rating and a broad operating temperature range. The simple working principle – the Zener breakdown phenomenon – is the primary factor in the diode’s ability to limit voltage and current while still protecting downstream components.

The specific data is subject to PDF, and the above content is for reference

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