FEPE16JT-E3/45

Introduction

The FEPE16JT-E3/45 is a diode array designed for use in a variety of applications, from plasma display panels (PDPs) to light-emitting diode (LED) automotive headlamps. The diode array has two arrays of eight Schottky diodes each: one for the cathode side and one for the anode side. Each diode has a rectified voltage rating of 100V, a peak pulse current rating of 16A, and an average forward current rating of 45mA. This component is ideal for applications that require a low forward voltage drop, high surge capability, and rectified voltage up to 100V.

Application field

The FEPE16JT-E3/45 diode array is most often used in applications that require a low forward voltage drop, high surge capability, and rectified voltage up to 100V. The Schottky diodes are commonly used in plasma display panels (PDPs), light-emitting diode (LED) automotive headlamps, and high-efficiency power supplies. Additional applications include overvoltage protection in power steering, airbags, and anti-lock brakes; motor-control; and LCD display screens.

Working Principle

The FEPE16JT-E3/45 provides two arrays of Schottky diodes for the cathode and anode sides, each with eight individual diodes. The diode array is designed to provide rectified voltage up to 100V, with a peak pulse current rating of 16A and an average forward current rating of 45mA. The Schottky diodes are specifically designed to have a low forward voltage drop, ranging from 0.1V to 0.3V, when passing current in the forward direction. This low forward voltage drop allows FEPE16JT-E3/45 to minimize losses, especially in applications that require a high amount of current, such as plasma display panels (PDPs).

When no current is flowing through the device, reverse-biased diodes form a barrier between the anode and the cathode. If a positive voltage is applied to the anode side, current begins to flow through the diodes and the load connected to the cathode side. The diode array is designed such that the current flow is limited to the direction from the anode to the cathode. Using the peak pulse current rating of 16A and the average forward current rating of 45 mA, the FEPE16JT-E3/45 is able to limit the current to prevent damage to the circuit.

The FEPE16JT-E3/45 is also designed to handle of high-speed circuit switching up to 350V. This is achieved by using a fast recovery time of < 1 nS. The diode array also has a low thermal resistance of 4°C/W, allowing it to dissipate heat quickly and efficiently.

Conclusion

The FEPE16JT-E3/45 is a diode array designed for use in a variety of applications, from plasma display panels (PDPs) to light-emitting diode (LED) automotive headlamps. The Schottky diodes provide a low forward voltage drop, up to a peak pulse current rating of 16A and an average forward current rating of 45mA. The diode array is also designed to handle of high-speed circuit switching up to 350V, and has a low thermal resistance of 4°C/W. The FEPE16JT-E3/45 is an ideal component for applications that require a low forward voltage drop, high surge capability, and rectified voltage up to 100V.