FEPF16BTHE3/45 Allicdata Electronics
Allicdata Part #:

FEPF16BTHE3/45-ND

Manufacturer Part#:

FEPF16BTHE3/45

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY GP 100V 8A ITO220AB
More Detail: Diode Array 1 Pair Common Cathode Standard 100V 8A...
DataSheet: FEPF16BTHE3/45 datasheetFEPF16BTHE3/45 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.63485
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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The FEPF16BTHE3/45 is an array of four independent silicon PIN diodes for use in high temperature, low voltage applications. FEPF16BTHE3/45 diodes feature very low forward voltage and very high blocking capability at low temperatures. The FEPF16BTHE3/45 package is an advanced, thermally stable, surface-mount package capable of withstanding high temperatures and pressure.

FEPF16BTHE3/45 diodes are widely used in rectification applications as a substitute for conventional, discrete diodes. They are widely used in industrial, automotive and consumer electronics applications. Other applications include power factor correction, power conditioning, motor speed control, and rectification of low-frequency signals. FEPF16BTHE3/45 diodes are also widely used in high frequency RF applications such as cellular base stations, telecom equipment, and automated test equipment.

FEPF16BTHE3/45 diodes operate as three-terminal devices, with the terminals labelled anode, cathode and gate. The anode and cathode terminals are connected to the diode’s rectification junctions, while the gate terminal is connected to the diode’s control junction. The gate terminal is used to control the forward bias (conduction) of the diode by applying a bias voltage to the gate terminal.

When the gate voltage is increased, the junction capacitance of the diode decreases resulting in increased conduction of current. Conversely, when the gate voltage is reduced, the junction capacitance of the diode increases and the diode becomes reverse biased, preventing current from being conducted. The FEPF16BTHE3/45 diodes have a reverse breakdown voltage range of 16V to 40V, a forward voltage drop of 0.21V or less, and an operating temperature range ranging from -55°C to +150°C.

The FEPF16BTHE3/45 diodes feature two important advantages over traditional, discrete rectifier diodes; their forward voltage drop is much lower and their junction capacitance is much lower. This significantly helps to reduce power losses in the circuit over the traditional diode, thus improving efficiency and performance. The FEPF16BTHE3/45 diodes also incorporate a number of other advantages, such as a short-circuit protection feature and ESD (electrostatic discharge) protection.

In summary, the FEPF16BTHE3/45 is a highly efficient, thermally stable and reliable array of four independent silicon PIN diodes that are designed for use in a wide variety of rectification applications. Its low forward voltage, low junction capacitance, and short-circuit protection makes it an ideal choice for applications where high efficiency and performance are required. Its wide operating temperature range and ESD protection make it an ideal choice for applications in automotive, industrial, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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