FESF8JTHE3/45 Allicdata Electronics
Allicdata Part #:

FESF8JTHE3/45-ND

Manufacturer Part#:

FESF8JTHE3/45

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 8A ITO220AC
More Detail: Diode Standard 600V 8A Through Hole ITO-220AC
DataSheet: FESF8JTHE3/45 datasheetFESF8JTHE3/45 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.41278
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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A FESF8JTHE3/45 diode is a single rectifier diode that is often used in automotive, industrial control, telecommunications, medical, and other electronic applications. It is a two-terminal device capable of conducting electrical current in one direction only. This makes it a suitable rectifier for many electrical applications. It is also used in DC to AC converters and other applications where a reliable, efficient rectification of AC voltage is required.FESF8JTHE3/45 diodes are constructed using silicon semiconductor materials, which are made up of elements such as silicon, arsenic, and boron. When two positively charged silicon atoms are combined, they form a P-type silicon material. This material has a P-type doping and contains an excess of positive charge. When two negatively charged boron atoms are combined, they form an N-type silicon material. This material has an N-type doping and contains an excess of negative charge.The single rectifier diode is connected between two analog circuits, one of which leads to the anode and the other to the cathode. The current flows in one direction only; from the anode to the cathode. When the P-type and N-type silicon materials are placed together, a PN junction is formed. This junction is the key to the diode\'s functionality and the source of its rectification capabilities.When a voltage is applied to the anode of the diode, the PN junction is reversed biased. This allows minority carriers to cross over and reverse biasing the junction prevents current from flowing in the reverse direction. If the voltage is removed, no current will flow in either direction as the PN junction barrier is still maintained. This is referred to as reverse breakdown.Although the FESF8JTHE3/45 diode is primarily a rectifier, it can also be used as a voltage regulator in some applications. In particular, the reverse breakdown voltage is used to regulate voltages. If the voltage across the diode is higher than the reverse breakdown level, current will not flow. If it is lower than the threshold, current will flow through the circuit.The FESF8JTHE3/45 diode is a reliable, efficient, and cost-effective solution for many applications. It provides a controlled one-way flow of current, allows for the regulation of voltage, and can be used in a variety of applications. Additionally, it is a perfect choice for rectifying AC to DC power, thanks to its low forward voltage drop and reverse breakdown threshold.

The specific data is subject to PDF, and the above content is for reference

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