Allicdata Part #: | FF1400R12IP4BOSA1-ND |
Manufacturer Part#: |
FF1400R12IP4BOSA1 |
Price: | $ 485.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 1400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF1400R12IP4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 440.94000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 1400A |
Power - Max: | 765000W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 1400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 82nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF1400R12IP4BOSA1 is an insulated gate bipolar transistor (IGBT) module, which is widely used in medium-power applications. This particular module is designed for the railway industry, being capable of supporting operation under very high temperature limits, withstanding voltages up to 12kV, and can deliver up to 1600A peak current.
An IGBT module is built from several individual transistor cells, which are wired in either a single module or a multi-module package. The cells are interconnected with bond wires, which provide electrical connection between the cells and the module terminals. By grouping the IGBTs into the modules, it is possible to share the load between the IGBTs, resulting in a smaller and more efficient design than traditionally discrete designs.
The primary benefit of an IGBT module is that it allows an efficient control of higher power applications. IGBT modules provide a very wide switching range and good linear response to the applied drive signals. Furthermore, they also offer higher maximum power, higher temperature performance and better voltage isolation than BJTs or SCRs.
The working principle of the FF1400R12IP4BOSA1 is based on the use of an insulated gate bipolar transistor (IGBT). IGBTs are semiconductor devices that combine a low on-state voltage drop with high switching speed. The IGBT consists of two sections: the collector and the base, which are separated by an insulated gate. The voltage applied to the gate controls the current flowing through the device by modulating the channel resistance between the collector and the base.
In the case of the FF1400R12IP4BOSA1 module, the IGBTs are configured in an inverse parallel connection. This type of connection ensures that even if one of the IGBTs fails, the remaining IGBTs in the module will continue to conduct current and the module will still operate.
The FF1400R12IP4BOSA1 module is suitable for applications such as locomotive traction, in addition to other automotive, railway and industrial applications where higher operating temperature, noise immunity, and robustness are essential.
In summary, the FF1400R12IP4BOSA1 is an IGBT module designed for the railway industry, providing high power switching, excellent linearity and high temperature performance. The module is capable of withstanding voltages up to 12kV, and can deliver up to 1600A peak current, while having an inverse parallel connection to ensure that the module will still operate even if one of the IGBTs fails.
The specific data is subject to PDF, and the above content is for reference
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