Allicdata Part #: | FF1400R12IP4PBOSA1-ND |
Manufacturer Part#: |
FF1400R12IP4PBOSA1 |
Price: | $ 502.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 1400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF1400R12IP4PBOSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 457.17400 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 1400A |
Power - Max: | 1400000W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 1400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 82nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF1400R12IP4PBOSA1 is a type of transistor module that is part of the larger family of insulated-gate bipolar transistors (IGBTs). These transistor modules are characterized by their high power density and low forward voltage, which makes them ideal for a wide range of applications.
Application Field of FF1400R12IP4PBOSA1
The FF1400R12IP4PBOSA1 is suitable for applications such as motor controllers, actuators, inverters, induction heating systems, solar cells, and more. It is most commonly used in the industrial sector, where its high power and low voltage capabilities are of the utmost importance. It is also commonly used in the automotive industry, where its robust design allows it to withstand fluctuating temperatures and other environmental conditions.
Working Principle of FF1400R12IP4PBOSA1
The FF1400R12IP4PBOSA1 works by utilizing the principles of an insulated-gate bipolar transistor (IGBT). An IGBT is a type of transistor that is known for its low conduction losses and ability to handle large amounts of power. It works by allowing an electric current to pass from the collector to the emitter in the presence of a voltage. When the voltage is turned off, the current will stop flowing.
The FF1400R12IP4PBOSA1 is a type of module that consists of two IGBTs, one connected in the forward direction and the other in the reverse direction. This allows for the bidirectional control of high power loads. The module also has an integrated gate drive circuit that helps reduce the complexity of the system and simplifies the gate control.
The FF1400R12IP4PBOSA1 also features a High-Speed Anti-Parallel Diode (HSAPD) to protect the IGBTs from inductive flyback. The HSAPD also allows for a snubber-less design, which eliminates the need for an additional snubber network. This increases the power efficiency further, making the FF1400R12IP4PBOSA1 suitable for use in high power applications.
Conclusion
FF1400R12IP4PBOSA1 is a type of transistor module that belongs to the insulated-gate bipolar transistors (IGBTs) family. This type of module is known for its high power density and low forward voltage, making it ideal for applications such as motor controllers, actuators, inverters, and more. It works by utilizing the principles of an IGBT with the help of an integrated gate drive circuit. It also features a High-Speed Anti-Parallel Diode (HSAPD) to protect the IGBTs from inductive flyback, increasing the power efficiency even further. This makes the FF1400R12IP4PBOSA1 suitable for use in a wide range of industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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