FFB2907A Discrete Semiconductor Products |
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Allicdata Part #: | FFB2907ATR-ND |
Manufacturer Part#: |
FFB2907A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 60V 0.6A SC70-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 60... |
DataSheet: | FFB2907A Datasheet/PDF |
Quantity: | 12000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Base Part Number: | FFB2907A |
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FFB2907A transistors are multi-contact devices that provide arrays of switch-controlled channels with a wide range of applications. FFB2907A transistors are among the most popular bipolar junction transistors (BJT) due to their high power handling capability, low on resistance and low capacitance, making them suitable for switch-mode power applications.
FFB2907A transistors are an integrated circuit consisting of four N-channel metal-oxide-silicon (MOS) field-effect transistors. They are constructed from single-crystal silicon, with a metal-oxide layer between the substrate and the gate ensuring high switching performance. Their input impedance is high and the on-state drain current can be controlled by the gate voltage.
The FFB2907A transistors are ideal for drive applications in high-frequency switching power supplies, such as those used in computers, mobile phones and other portable electronics. The integrated design ensures easier manufacturing, and the integrated circuitry can reduce the number of components needed, resulting in lower costs.
FFB2907A transistors operate using three basic components: the base, the collector and the emitter. The base is a terminal that receives the input signal and is responsible for controlling the current flow. The collector carries the output current and the emitter is the source of current for the base.
To turn on the FFB2907A transistor, the gate voltage is raised above the threshold voltage. This allows current to flow from the drain terminal to the gate and to the source terminal. When the gate voltage is lower than the threshold voltage, the transistor is in its OFF state, with the N-channel MOSFET turning off, thus blocking the current flow.
FFB2907A transistors are also very efficient as they are designed to work at low forward voltages and high drain currents. This eliminates the need for additional active components, thus reducing power losses. In addition, they have low gate noise and fast switching speeds, making them perfect for fast-switching power supplies.
In terms of applications, FFB2907A transistors are mainly used in switch-mode power supplies, DC-DC converters, power-over-Ethernet (PoE), motor control and data acquisition systems. They are also used in high-frequency radio-frequency (RF) and microwave amplifiers, power amplifiers and power conditioning systems in communication systems.
Overall, FFB2907A transistors are highly reliable, high-speed switch-mode power devices that offer significant advantages in a wide range of applications. With their low power consumption and high switching speeds, they are an excellent choice for power supply design and any application that requires reliable and efficient switching control.
The specific data is subject to PDF, and the above content is for reference
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