Allicdata Part #: | FFPF04F150STU-ND |
Manufacturer Part#: |
FFPF04F150STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 1.5KV 4A TO220F |
More Detail: | Diode Standard 1500V 4A Through Hole TO-220F-2L |
DataSheet: | FFPF04F150STU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1500V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 170ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1500V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220F-2L |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes - Rectifiers - Single - FFPF04F150STU application field and working principle
FFPF04F150STU is a type of product classified into a category called Diodes - Rectifiers - Single. This product can provide high efficiency, low power loss and low leakage current for its users. FFPF04F150STU rectifier diode is widely used in the fields of power supply, rectification, UPS, Data center and so on.
FFPF04F150STU diode works on the principle of PN junction. In its electronic structure, semiconductors are paired together to form two bonds namely, P-type and N-type semiconductors. The P-type semiconductors carry positive charges, whereas the N-type semiconductors carry negative charges. When a P-type and N-type semiconductor are placed close together, the positive and negative charges create an interfacial electric field. This creates a charge barrier known as a depletion region that resists the flow of current.
This interfacial electric field is the driving force of the rectifier and turns current into DC power. When a potential difference is applied to the PN junction, it generates a voltage across the depletion region, which increases the current flowing through the diode. Depending on the voltage, the electric field may be reversed, thereby allowing current to flow in both directions.
The FFPF04F150STU rectifier diode is designed with an anode and a cathode in opposite direction. When a current is passed through the diode, it will pass through the anode, through the depletion region and the semiconductor material, and to the cathode. As the electric field increases or decreases, the current flowing through the diode will also change.
The anode is also designed with an insulation layer to protect it from any external damage. The insulation material, usually made from metal oxide, increases the lifetime of the diode. The internal structure of the FFPF04F150STU diode also consists of a specially designed advanced metal alloy to increase the strength and performance of the device.
FFFC04F150STU rectifier diode also has the ability of current rectification, and it can guarantee the stability of DC output current. Its anode and cathode are connected to specific pins, and it can be placed in parallel with a completed bridge rectifier circuit in order to increase the peak current values.
FFFC04F150STU diode has many excellent performance features, including low forward voltage drop, fast response and ultra-low reflection. Its soft recovery phenomenon also helps reduce switching losses. In addition, the FFPF04F150STU rectifier diode has high shock resistance and is capable of running at high temperature environments and preventing thermal runaway situation.
In summary, FFFC04F150STU rectifier diode is equipped with outstanding performance features, which makes it ideal for use in high efficiency and low power consumption applications. Its Anode and Cathode design paired with metal(oxide) insulation layers and advanced alloy structure increases the lifetime and ensures stable output. The FFPF04F150STU diode is capable of current rectification, fast response, low switch loss and temperature protection ensuring its versatility in different applications.
The specific data is subject to PDF, and the above content is for reference
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