FGD2736G3-F085 Discrete Semiconductor Products

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The FGD2736G3-F085 is one of a family of Insulated-Gate Bipolar Transistors (IGBTs) designed for high-performance applications such as motor drives, solar inverters, UPS/battery charge-discharge and drive units. This article aims to explain the single IGBT\'s application field and working principle.

An IGBT combines the features of a fast-switching MOSFET and a high-current gain-switched bipolar transistor. It consists of an N-channel insulated gate and a P-channel collector-emitter path. On the N-channel side, the gate is connected to an insulated-gate control terminal, and on P-channel side the collector terminal which is connected to a load.

The FGD2736G3-F085 is designed for commercial and industrial motor drive applications. It is suitable for dc and three-phase AC motor drives. Its optimized switch is intended for low- to medium-speed switching. It supports high-temperature applications such as battery charging and discharge control.

The FGD2736G3-F085 is capable of 600V and 800V operation, which makes it a suitable choice for powering medium voltage ac motors. IGBTs are also much more efficient and usable than traditional thyristors in a light-load, no-load, or partial-load situation, making the FGD2736G3-F085 a great choice for drives with unpredictable and varying load demands.

The FGD2736G3-F085 has a peak collector current rating of 85A and utilizes advanced trench gate technology. The IGBT is also designed with fast switching speeds, high frequency capabilities and low on-state resistance for improved efficiency and power density.

The working principle of the FGD2736G3-F085 is fairly simple. When the gate voltage is applied, the transistor becomes conductive. This allows current to pass from the collector to the emitter, allowing the transistor to operate in the on-state. When the gate voltage is removed, the transistor turns off, thus ending conduction and allowing the power to be shut off.

In summary, the FGD2736G3-F085 is a single IGBT designed for various motor drive applications and high-temperature applications. It is capable of operating at 600V and 800V, has a peak collector current rating of 85A and utilizes advanced trench gate technology and fast switching speeds, high frequency capabilities and low on-state resistance. Its working principle is based on the application of gate voltage to enable conduction and the removal of gate voltage to turn the transistor off.

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