FGD2N40L Discrete Semiconductor Products |
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Allicdata Part #: | FGD2N40LTR-ND |
Manufacturer Part#: |
FGD2N40L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 400V 7A 29W DPAK |
More Detail: | IGBT 400V 7A 29W Surface Mount D-Pak |
DataSheet: | FGD2N40L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 29W |
Base Part Number: | FGD2N40 |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Test Condition: | 300V, 2.5A, 51 Ohm, 4V |
Td (on/off) @ 25°C: | 47ns/650ns |
Gate Charge: | 11nC |
Input Type: | Logic |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 2.4V, 2.5A |
Current - Collector Pulsed (Icm): | 29A |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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IGBTs, or Insulated Gate Bipolar Transistors, are a type of power transistor that combines the advantages of both bipolar transistors and MOSFETs. The FGD2N40L is a type of IGBT with characteristics that make it useful for a variety of applications. In this article, we will look at the application field and working principle of an FGD2N40L.
The FGD2N40L is a high-speed IGBT, meaning it is designed to switch between conducting and non-conducting states quickly. The fast switching speed of the FGD2N40L makes it ideal for use in applications where high-frequency switching operations are required, such as inverters, motor drives, and power conversions. It is also capable of handling high-power applications, making it suitable for use in AC inverter circuits and DC motor drives.
The FGD2N40L has a wide operating voltage range, between 800V and 1100V, making it suitable for use in a variety of power supplies. It also has a low on-state resistance, meaning it can be used to regulate more current with less power consumption. This feature makes the FGD2N40L an efficient power device with a high power density.
The FGD2N40L also has a fast recovery time, meaning it can change from a conducting to a non-conducting state quickly. This makes it useful for power conversion applications where it is necessary to switch between conductive and non-conductive states rapidly. Additionally, the FGD2N40L can be used in applications such as motor control, where it can be used to regulate motor speed or torque.
The working principle of an FGD2N40L relies on the two different electrical properties of the device, which are its high-power capacity and its high-speed switching capability. When the FGD2N40L is turned on, it acts as a bipolar transistor in which current flows through the device in both directions. The FGD2N40L then acts as a MOSFET, where a voltage applied to the gate of the device will cause current to be conducted from the drain to the source. This allows the device to switch between conducting and non-conducting states quickly.
In summary, the FGD2N40L is a type of IGBT that combines the advantages of bipolar transistors and MOSFETs. Its high-power capacity and high-speed switching capability make it ideal for use in applications that require rapid current changes and high-power handling. The FGD2N40L is well-suited for use in a variety of power conversion and motor control applications, as well as other applications where rapid switching operations are required.
The specific data is subject to PDF, and the above content is for reference
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