Name: FGH50N3
Brand: ON Semiconductor
SKU: FGH50N3-ND
Price: 6.00 USD
Availability: InStock

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The FGH50N3 is an IGBT certified for use in a high-powered single transistor application. It is a direct replacement for existing designs and provides a much higher level of performance compared to traditional components. With its superior energy efficiency, it allows designers greater flexibility when specifying an overall system requirements.

Overview

The FGH50N3 is a high voltage insulated gate bipolar transistor (IGBT) manufactured by Fairchild Semiconductor. This device has very low collector-emitter resistance at a high output, allowing for higher levels of power output. It includes an integrated Freewheel Diode (FWD) and an active Miller Plate, which allows the proper ratio of current and voltage to be maintained, thereby facilitating linear and symmetrical switching operations. It is designed for operation in single transistor applications, such as motor control systems, light dimmers, phase-change loads, and high-power switching circuits.

Advantages

The FGH50N3 is designed to provide superior performance compared to traditional MOSFETs, offering higher output and increased energy efficiency. Its low gate driving voltage and high current rating makes it an ideal choice for high-power applications. It is also suitable for applications in which a switching device needs to be run at 3-phase AC or DC current. Its high output current capabilities make it capable of handling complex and demanding power requirements, as well as providing better protection against over-currents and short-circuits. Additionally, it has very low thermal resistance and a low saturation voltage, so it can run at higher levels of power output with minimal heat generation.

Features and Operating Characteristics

The FGH50N3 has an operating voltage range of 650V and a current rating of 50A in single and 25A in three-phase operation. It features a rated junction temperature range of -25°C to +85°C and a low static protection of 30mV. Its minimum and maximum gate threshold voltages range from 4.1-4.4 and 7.4-8.4V, respectively. It also has a low threshold gate current rating of 1mA. The device is available in both through-hole and surface mount packages.

Working Principle

The FGH50N3 is part of the family of insulated gate bipolar transistors. It is composed of three regions: the collector, the emitter, and the base region. The base of the component is connected to an insulated electrical barrier, separating it from the other two regions. The device works by applying a voltage on the insulated gate, which in turn induces an electric field. This electric field will cause the electrons in the base region to movement, which then interacts with the electric field in the other two regions. The resulting interaction between the electric fields and the electrons creates a junction potential between the three regions. This junction potential is used to control the flow of electrons between the base and emitter, thereby controlling the entire current flow.

Applications

The FGH50N3 is an ideal choice for applications that require high power switching or inverter-type operation. It is particularly suitable for motor control systems, dimmers, and lighting systems, as well as a variety of industrial applications. Its low cost, high performance, and energy efficiency make it an attractive choice for designers looking for an optimized internal switching solutions.

Conclusion

The FGH50N3 is an advanced IGBT component for single transistor applications. Its low gate voltage and current requirements, coupled with its high current capabilities, makes it ideal for high-stress applications in which power output performance must be balanced with energy efficiency. Its Freewheel Diode (FWD) and Miller Plate also make it ideal for use in three-phase operations. The FGH50N3 is a great solution for any applications requiring increased power efficiency, while still providing superb power output.

Allicdata Part #:	FGH50N3-ND
Manufacturer Part#:	FGH50N3
Price:	$ 6.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	ON Semiconductor
Short Description:	IGBT 300V 75A 463W TO247
More Detail:	IGBT PT 300V 75A 463W Through Hole TO-247
DataSheet:	FGH50N3 Datasheet/PDF
Quantity:	440
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):	1 (Unlimited)

1 +:	$ 5.44950
10 +:	$ 4.92156
100 +:	$ 4.07453
500 +:	$ 3.54803
1000 +:	$ 3.09023

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	300V
Current - Collector (Ic) (Max):	75A
Current - Collector Pulsed (Icm):	240A
Vce(on) (Max) @ Vge, Ic:	1.4V @ 15V, 30A
Power - Max:	463W
Switching Energy:	130µJ (on), 92µJ (off)
Input Type:	Standard
Gate Charge:	180nC
Td (on/off) @ 25°C:	20ns/135ns
Test Condition:	180V, 30A, 5 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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FGH50N3-ND

FGH50N3

Discrete Semiconductor Products