FGH50T65SQD-F155

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Introduction

The FGH50T65SQD-F155 is an Insulated Gate Bipolar Transistor (IGBT) with single device structure. This transistor is usually utilized in automotive, motor control and industrial motor control systems.

Application Field

IGBT is normally used in high power applications. Specifically, it is well suited in the automotive, motor control, industrial motor control and power conversion applications which require high efficiency and high power density. FGH50T65SQD-F155 can also be used in other industries such as IT, electrical communication and home appliances.

The FGH50T65SQD-F155 can be used in a variety of applications including:

• Automotive: Electronic throttle control, electric power steering, and electric vehicle chargers
• Motor Control: Positives and negatives for induction, stepper, brushless motors, and servo motors
• Industrial Motor Control: Speed and position control, adjustable frequency drives and soft starters
• Power Conversion: Voltage regulator, converters, and frequency inverters
• IT: Computers, communications amplifier, optical storage devices, and flat panel displays
• Electrical Communications: impedance matching, power amplifiers, and channel expansions
• Home Appliances: Power supply, washing machines and vacuum cleaners

Working Principle

The FGH50T65SQD-F155 is an N-type device, with a P-type Epitaxial Base and N-type Emitter. When a voltage is applied to the gate of the IGBT, a conductive channel is formed between the Emitter and the Collector that allows current to flow. This current is known as the \'on state\', and the FGH50T65SQD-F155 is said to be \'on\'. When the voltage to the gate is removed, the conductive channel is broken (open) and the IGBT is \'off\' again.

When the FGH50T65SQD-F155 is in the \'on\' state, current will flow from the Emitter to the Collector and the Collector-Emitter voltage of the device will be low. This voltage is known as the \'saturation voltage\'. When the IGBT is in the \'off\' state, no current flows, and the Collector-Emitter voltage of the device increases. This voltage is known as the \'cut-off voltage\'.

The FGH50T65SQD-F155 has a high commend speed (less then 100 ns) and is able to support low voltage gate drive and low gate charge. It also is designed to have superior thermal performance with a low junction-to-case thermal resistance.

Conclusion

The FGH50T65SQD-F155 is an Insulated Gate Bipolar Transistor (IGBT) with single device structure. It is suitable for a variety of applications including automotive, motor control, industrial motor control, power conversion, IT, electrical communications, and home appliances. IGBT can reduce power losses while increasing efficiency of motor control systems. FGH50T65SQD-F155 features superior thermal performance, high speed, low voltage gate drive, low gate charge and low junction-to-case thermal resistance.

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