
Allicdata Part #: | FGM603-ND |
Manufacturer Part#: |
FGM603 |
Price: | $ 2.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | IGBT 600V 30A 60W TO3PF |
More Detail: | IGBT 600V 30A 60W Through Hole TO-3PF |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1080 +: | $ 1.85220 |
Power - Max: | 60W |
Supplier Device Package: | TO-3PF |
Package / Case: | TO-3P-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | 300V, 30A |
Td (on/off) @ 25°C: | 130ns/340ns |
Gate Charge: | 120nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 90A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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FGM603 is a type of insulated gate bipolar transistor (IGBT) that is suitable for use in an array of applications. This IGBT is a member of Fuji Electric’s Single family of IGBTs, which is well-known for its high current-carrying capability and low gate charge ratings. As such, the FGM603 is a popular device among those involved in electric motor control, welding and aerospace applications.
This IGBT is a bidirectional power semiconductor device used for switching and controlling electrical power. It is composed of a N-channel MOSFET both body-diode and an IGBT core. This allows it to be used in applications where a single device needs to control both directions of current.
In terms of its dimensions and ratings, the FGM603 IGBT is available in a single-in-line (SIL) package with a power rating of 600 volts (V) and a collector current of 30 amperes (A). Additionally, this device is rated for an operating temperature range of -40 to +150 degrees Celsius (-40 to +302 degrees Fahrenheit). It has a maximum junction temperature of 175 degrees Celsius (347 degrees Fahrenheit).
The internal structure of the FGM603 IGBT contains two main components: a PIP (Power Insulated Positive) circuit and an NIP (Negative Insulated Positive) circuit. These two circuits work together to form the main body of the transistor. The PIP circuit is responsible for controlling the amount of current that enters the transistor, while the NIP circuit is responsible for controlling the amount of current that leaves the transistor.
At the heart of the FGM603 IGBT lies its working principle, which is to use a combination of a diode and a transistor to control the flow of electric current. The transistor is connected to a gate voltage, while the diode is connected to a voltage source. When a positive voltage is applied to the transistor gate, a positive current flows through the transistor channel and this allows current to flow into and out of the device. When the gate voltage is reduced, the current flow is reduced which shuts off the current flow.
The FGM603 IGBT is commonly used in a variety of electric motors, air conditioners, and other high-power applications. It is also used for welding machines and in DC-DC step-up power supplies. Additionally, this IGBT is used in solar power generation, electric charging systems and in devices that require high-speed switches, such as liquid crystal display devices.
Overall, the FGM603 IGBT from Fuji Electric is a reliable and versatile device that offers higher performance than competitive devices and lower gate charge, allowing for better switching performance. Thanks to its low on-resistance, low gate charge and temperature, and high current-carrying capability, the FGM603 is the ideal choice in a wide range of applications where an IGBT is required.
The specific data is subject to PDF, and the above content is for reference
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