FGM622S

Power - Max:	60W
Supplier Device Package:	TO-3PF-3
Package / Case:	TO-3P-3 Full Pack
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Test Condition:	--
Td (on/off) @ 25°C:	50ns/200ns
Gate Charge:	40nC
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 25A
Current - Collector Pulsed (Icm):	75A
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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FGM622S Application Field and Working PrincipleThe FGM622S is a type of insulated gate bipolar transistor (IGBT) featuring fast switching, low gate charge, and high current capability. It is one of the most widely used IGBTs, and its application field is growing each year. The FGM622S can be used in power, motor control, consumer electronics, industrial automation applications, and automotive applications.The FGM622S IGBT has a built-in high-voltage, low-on-resistance MOSFET, making it highly efficient for DC control, pulse and other switching applications. The FGM622S also features an optimized gate structure and a high-dielectric layer for exceptional switching characteristics, such as reverse recovery time, dV/dt immunity, and avalanche strength.The working principle of the FGM622S starts with the gate being energized to a positive voltage, switching on the MOSFET channel, and allowing current to flow between the collector and emitter of the IGBT. When the voltage goes below a certain threshold, the MOSFET channel is switched off, blocking current flow between the emitter and collector. The gate-emitter voltage must remain above the threshold voltage in order to keep the IGBT turned on.The FGM622S IGBT works by using a gate driver circuit that supplies sufficient current to the gate of the IGBT to turn it on and off. Once the IGBT is turned on, a surge of current flows from collector to emitter, moving charge carriers from the N- to the P-type semiconductor material in the IGBT, causing it to behave like a short circuit. This current can then be controlled by the gate driver circuit to maintain the forward bias and the desired collector-emitter current.As the collector-emitter current intensifies, the charging of the P-N junction between the gate and the collector continues until it is completely charged. This causes the IGBT to become reverse biased, and implies that the collector-emitter current crumbles because of the bouncing back of the carriers in the P-N junction, resulting in a reverse-recovery current which moves in the opposite direction of the collector-emitter current.The reverse-recovery current then pushes its way back to the source, using the drain-source voltage as the source voltage. The FGM622S IGBT has a low enough reverse-recovery time to enable it to be used in pulse applications and high-frequency circuits.The FGM622S IGBT can be used in a variety of applications, such as light dimming, ballasts, automotive systems, AC/DC converters, high-power converters, industrial motor drives, frequency converters, and other power control applications. Its fast switching, low gate charge, and high current capability make it ideal for high-performance applications.Furthermore, the FGM622S IGBT is reliable, has a low noise level, and a wide temperature range, making it suitable for extended use in commercial and industrial environments. In addition, the FGM622S has no rated lifetime service, thereby making it suitable for applications that require consistent operation.The FGM622S is therefore the ideal choice for applications in industrial automation, automotive, and consumer electronics, both in terms of performance and reliability. Its cutting-edge technology and wide compatibility make it an ideal choice for a broad range of applications.

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