FGP10N60UNDF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FGP10N60UNDF is a static-drain N-channel enhancement-mode insulated gate bipolar transistors (IGBTs). This thin-film field-effect semiconductor device, commonly called a unipolar transistor, consists of two insulated gate electrodes connected to a single-phase N-channel conductive polymer, usually known as an IGBT discrete. This metal-oxide-semiconductor electrode is made up of three components: source, drain and gate. The IGBT works by applying a voltage to the gate depending on the load demands across the source and the drain.

The device is designed to provide superior performance in high speed switching operations. Its maximum total gate charge (QG) at a gate voltage of 15V is typically less than 8.5nC. It has a very low gate resistance of less than 5Ω, allowing very fast switching of the IGBT. With its low effective switching losses, FGP10N60UNDF is well-suited for use in high-frequency inverter applications.

FGP10N60UNDF offers low gate-emitter capacitance, which is ideal for high-frequency operation. It also has a maximum operating temperature of 175°C, making it suitable for use in wide operating temperature range applications. Furthermore, its low conduction loss makes it a perfect choice for high-efficiency applications.

FGP10N60UNDF’s maximum total gate charge, low gate resistance and low effective switching losses make it well-suited for use in high speed, high frequency inverter applications. As the gate voltage and load requirements increase, it is able to offer superior performance in high-voltage operation. Its low conduction loss and wide operating temperature range make it well-suited for use in low-energy consumption and high-efficiency applications.

In conclusion, FGP10N60UNDF is a great choice for high-power and high-efficiency applications. It offers superior performance in high-voltage, high-frequency and wide temperature range applications. Its low total gate charge, low gate resistance and low effective switching losses ensure that it is suitable for use in high-power, low-energy consumption and high-efficiency applications. Finally, it is perfect for high-speed, high-frequency applications that require superior performance and long-term reliability.

The specific data is subject to PDF, and the above content is for reference