FGP10CHE3/54

Series:	SUPERECTIFIER®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	950mV @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	35ns
Current - Reverse Leakage @ Vr:	2µA @ 150V
Capacitance @ Vr, F:	25pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	FGP10C

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Diodes - Rectifiers - Single | FGP10CHE3/54 Application Field and Working Principle

The FGP10CHE3/54 is a silicon pin diode rectifier wafer with a low forward voltage drop and high current capability. It is intended for use in high-speed switching and high-current rectification applications, such as power conversion and power management. This article provides an overview of the application field and working principle of this rectifier.

Application Field
The FGP10CHE3/54 is suitable for a wide range of applications due to its low forward voltage drop and high current capability. It is ideal for high-power conversion and power management applications such as DC-DC converters, AC-DC adapters, power supplies, and automotive electronics. It is also used in switching applications, such as high-speed transistors, pulse transformers, low-voltage power controllers, and switch-mode power supplies. Additionally, this rectifier is capable of providing reliable protection against over-voltage and over-current transients in commercial power supplies and industrial electronic systems.

Working Principle
The FGP10CHE3/54 rectifier operates on the principle of charge storage in a PN junction. When current flows through the diode, a depletion region is formed at the junction of the two layers of the device. This depletion region acts as a barrier that prevents the electrons from flowing back or forth. When forward-biased, the depletion region decreases in size and allows electrons to pass. This allows current to flow through the diode and the device is effectively "turned on." When reversed-biased, the depletion region is larger and no electrons are allowed to pass, effectively "turning off" the diode. This allows the rectifier to regulate the flow of current. The electric field also serves to improve the switching speed of the device by reducing the internal capacitance or "on resistance."

In summary, the FGP10CHE3/54 rectifier is a low forward voltage drop, high current diode with a wide range of applications. It is suitable for use in high-speed switching and high-current rectification applications, such as power conversion and power management. It also has reliable protection against over-voltage and over-current transients. The rectifier operates on the principle of charge storage in a PN junction and can regulate the flow of current. It can also improve the switching speed of the device by reducing its internal capacitance.

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